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ITT - Index of

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<strong>ITT</strong>2001, <strong>ITT</strong>2002, <strong>ITT</strong>2003<br />

SILICON SWITCHING DIODE<br />

ELECTRICAL CHARACTERISTICS, <strong>ITT</strong>2002 (25°C unless otherwise noted)<br />

Parameter Min Max Units Test Conditions<br />

VF Forward Voltage 1.0 Volts IF=100ma<br />

IR. Reverse Current 0.1 ua VR=150V<br />

IR, Reverse Current (150°C) 100 ua VR=150V<br />

BV Breakdown Voltage 200 Volts IR=100ua<br />

as Storage Charge (Note 2) 500 pc IF=10ma<br />

Co Capacitance 5.0 pf VR=OV, f=1MHz<br />

ELECTRICAL CHARACTERISTICS, <strong>ITT</strong>2003 (25°C unless otherwise noted)<br />

Parameter Min Max Units Test Conditions<br />

VF Forward Voltage 1.0 Volts IF=100ma<br />

IR. Reverse Current 0.1 ua VR=150V<br />

IR, Reverse Current (150°C) 100 ua VR=150V<br />

BV Breakdown Voltage 250 Volts IR=100ua<br />

as Store Charge (Note 2) 500 pc IF=10ma<br />

Co Capacitance 5.0 pf VR=OV, f=1MHz<br />

11-13

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