ITT - Index of

_
I mm
.L.L _______
SEMICONDUCTORS
MPS3693
GENERAL PURPOSE NPN,
SI_L_I C_O_N_R_FA_M_PL_I_F_I E_R_T_R_A_N_S_IS_T_O_R_S
Package: To-92
NPN SILICON GENERAL PURPOSE
RF AMPLIFIER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
Characteristic
Unit
Collector-Emitter Voltage ........................... 45 Vdc
Collector-Base Voltage ................................ 45 Vdc
Emitter-Base Voltage .................................... 4.0 Vdc
Total Device Dissipation @ T A = 250 C ........• 310 mW
Derate above 250 C ......................... 2.81 mW/oC
Operating and Storage Junction
Temperature Range ................... -55 to +135 0c
Thermal Resistance, Junction
to Ambient ........•.•........................ 0.357 oC/mW
ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)
Symbol Min Typ Max Unit Conditions
45 - - Vdc I C =10mAdc,I B =0
BV CEOJsus) *
BV CBO 45 - - Vdc IC = 100UAdc,I E = 0
BV EBO 4.0 Vdc IE = 10uAdc,I C -0
ICBO - - 50 nAdc V CB = 35 Vdc, IE = 0
- - 5.0 uAdc V CB - 35 Vdc, IE - 0, T A = 65°C
hFE 40 - 160 - IC - 10 mAde, v CE = 10 Vctc
fT 200 - - MHz IC = 10 mAde, VCE = 15 Vdc,
f=100MHz
Cob - - 3.5 pF V CB - 10 Vdc, IE = 0, f = 100 kHz
r' C
b c
- 55 ps IE - 10 mAde, V CB - 15 Vdc,
f = 31.8 MHz
NF - 4.0 - dB IC = 3.0 mAde, V CE = 10 Vdc,
RS = 300 ohms, f = 1.0 MHz
·Pulse Test: Pulse Width ~ 300 us; Duty Cycle ~ 1.0%.
9-18