ITT - Index of

2N2222A
SILICON SWITCHING TRANSISTOR
ELECTRICAL CHARACTERISTICS continued
Parameter Min. Max. Unit Conditions
ICEX 10 nA VCE= 60V, VEB= 3V
IEBX 20 nA V EB= 3V, V CB= 60V
lEBO 10 nA VEB= 3V
Cob S pF V CB= 10V
Cib 25 pF V EB= 0.5V
hfe 50 300 Ic= 1mA, VCE= 10V,f = 1KHz
hfe 75 375 Ic= 10mA, VCE= 10V, f = 1KHz
hfe 2.5 I c= 20mA, V CE= 20V, f = 100MHz
hie 2.0 8 Kohms Ic= 1mA, VCE= 10V,f = 1KHz
hie 0.25 1.25 Kohms Ic= 10mA, VCE= 10V, f = 1KHz
hre 8 X10-4 I C = 1 mA, V CE= 1 OV, f = 1 KHz
hre 4 X10-4 I C= 10mA, V CE= 10V, f = 1KHz
hoe 5 35 mho I C= 1mA, V CE= 10V, f = 1KHz
hoe 25 200 mho Ic= 10mA, VCE= 10V, f = 1KHz
Re(hie) 60 ohms I c= 20mA, V CE= 20V, f = 300MHz
rb'Cc 150 ps ! Ic=20mA, VCE= 20V, f = 31.SMHz
s 2.5 ns Ic = 150mA,IB1 = 15mA, Vcc = 30V, VEB= 0.5V
I
td 10 ns Ic = 150mA,IB1 = 15mA, Vcc = 30V, VEB = 0.5V
tr 25 ns Ic = 150mA,IB1 = 15mA, VCC= 30V, VEB= 0.5V
ts 225 ns I c= 150mA, I B1= I B2= 15mA, V cc= 30V
tf 60 ns I c= 150mA,I B1= I B2= 15mA, V cc= 30V
NOTES: Pulse width 300 sec. duty cycle 2%.
I
9-45