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<strong>ITT</strong><br />

JAN 1N4148<br />

SILICON SWITCHING DIODE<br />

- -----<br />

SEMICONDUCTORS<br />

SILICON EPITAXIAL PLANAR<br />

SWITCHING DIODE<br />

• 00·35 Construction<br />

• Hermetically Sealed<br />

• Passivated Surfaces<br />

• Inherently Reliable<br />

ABSOLUTE MAXIMUM RATINGS<br />

Characteristics @ 25°C<br />

Units<br />

Peak Inverse Voltage .............. 100Volts<br />

Power Dissipation ................. 250 mV<br />

Storage Temperature ...... -65 to +200°C<br />

Avg. Rectified Fwd. Current .......... 75 mA<br />

Surge Current, 1 second ............ 500mA<br />

ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted.<br />

Symbol Min. Typ. Max. Unit Conditions<br />

PIV 100 Vdc IR=100fJ.A<br />

IR 25 nA VR-20V<br />

5.0 fJ.A VR=75V<br />

50 fJ.A VR=20V, T=150°C<br />

100 fJ.A VR=75V, T=150°C<br />

VF 1.0 Vdc IF =10mA<br />

C 4.0 pF VR-OV<br />

2.8 pF VR=1.5V<br />

Trr 5.0 nsec IF-IR-10mA, C-3pF,<br />

RL = 100n, Rec. to 1.0mA<br />

Tcr 5.0 Vdc 50mA/20 nsec, Rep. Rate<br />

Less than 100 KC<br />

11-8

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