ITT - Index of

ITT
2N3724, 2N3725, 2N4013, 2N4014
SjLlCON SWITCHING TRANSISTORS
- -----
SEMICONDUCTORS
HIGH SPEED NPN SILICON PLANAR
EPITAXIAL HIGH-VOLTAGE
HIGH-CURRENT TRANSISTORS
• High Voltage: 80V min. 2N3725, 2N4014
• High Gain: 65 typo @ 1000 mA
• Low VCE (sat): 0.5V typo @ 1000mA
• Low Cob: 4.8 pF typo @ 10V. 2N3725, 2N4014
• Fast ton: 18 nsec typo @ 500mA
• Fast toff : 45 nsec typo @ 500mA
The ITT 2N3724 • 2N3725 and 2N4013 • 2N4014
are high-voltage, high-current NPN silicon planar
epitaxial transistor useful for applications requiring
breakdown voltages up to 50V and operating
current to one ampere. Low saturation voltage and
fastswitching times make the transistor ideal for
high-frequency amplifiers, core drivers, relay drivers
and pulse generators.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Collector-to-8ase Voltage ......................... .
Collector-to-Emitter Voltage (shorted base)
2N3724
2N4013
50
50
2N3725
2N4014
80
80
UNITS
Volts
Volts
Collector-to-Emitter Voltage (open base) ..
Emitter-to-8ase Voltage ............................ .
Collector Current (300 sec; 1 % duty cycle)
30
6.0
1.0
50
6.0
1.0
Volts
Volts
Amps
Junction Temperature (op. and stg.) ..........
Maximum Power Dissipation
-65 to +200 oC
2N4013 2N3724
2N4014 2N3725
Total Dissipation @ Tc = 25 0 C
(derate above 25"C) .............................. ..
Total Dissipation @TA= 25 oC .................. .
(derate above 25 oC) .............................. ..
1.2
(6.8 mW/oC)
0.36
(2.06 mW/oC)
3.5 Watts
(20mW/oC)
0.8 I Watts
(4.56 mW/"C)
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