ITT - Index of

2N706.2N706A.2N706B
SILICON SWITCHING TRANSISTOR
ELECTRICAL CHARACTERISTICS (25 oC free air unless otherwise noted)
Symbol Min. Max. Unit Conditions
BVCBO 25 Vdc I c= 10~A
LVCER 20 Vdc I c= 10mA, R BE= 10rlpulsed
BVEBO 5 Vdc I E= 10]lA
hFE 20 I c= 10mA, V CE= 1V
VCE (sat) 0.6 Vdc I c= 10mA, I B= 1mA
VBE (sat) 0.7 0.9 Vdc Ic= 10mA,IB= 1mA
ICBO 0.5 ]lA V CB= 15V
ICBO 30 ~A VCB = 15V, TA = 1500 C
Cob 5 pF VCB= 5V
hie 2 I c= 10mA, V CE= 10V, f = 100MHz
ts 25 ns I c.= I B1 = I B2= 10mA, V cc= 10V, R L= 1 K
ton 40 ns I B1 = 3mA, I B2= 1 mA, V CC= 3V, R L= 270
toll 75 ns I B1 = 3m A, I B2.= 1mA, V cc= 3V, R L= 270
ELECTRICAL CHARACTERiSTICS (25 oC free air unless otherwise noted)
Symbol Min. Max. Unit Conditions
BVCBO 25 Vdc I c= 10 A
LVCER 20 'Vdc I c= 10mA, R BE= 10 pulsed
LVCEO 15 Vdc I c= 10mA pulsed
BVEBO 5 Vdc I E= 10~A
hFE 20 60 Ic= 10mA, VCE-IV
VCE (sat) 0.4 Vdc I c= 10mA, I B= 1mA
VBE (sat) 0.7 0.9 Vdc I c= 10mA, I B= 1mA
ICBO 0.5 ]lA VCB= 15V
ICBO 30 ]lA VCB = 15V, TA = 1500 C
ICER 10 ]lA VCE = 20V, RBE = 100K
Cob 5 pF VCB- 5V
hie 2.0 I c= 10mA, V CE= 10V, f = 100MHz
rbl 50 ohms I c= 10mA, V eE= 15V, f = 300M Hz
Ts 25 ns Ic= IB1= IB2= 10mA, Vce= 10V, R L= 1
I
•
I
ton 40 ns I B1 = 3m A, I B2= 1mA, Vce= 3V, R L= 270
toll 75 ns I B1 = 3m A, I B2= 1mA, V ce= 3V, R L= 270
NOTE: Pulse width 300 sec. duty cycle 2%.
9-29