ITT - Index of

_
I mm
-L-L ______
SEMICONDUCTORS
1 N645 THRU 1 N649
DIFFUSED SILICON
G_E_N_ER_A_L_-_PU_R_P_O_S_E_D_I_O_D_E_S
DIFFUSED SILICON GENERAL-PURPOSE DIODES
• Hermetically sealed • 00-7 package
• Rugged construction • High reliability
ABSOLUTE MAXIMUM RATINGS at 25 D C Free-Air Temperature (unless otherwise noted)
Symbol Characteristics IN64S 1N646 1N647 1N648 1N649 Unit
VRl\Itwlig) Working Peak Reverse Voltage over 225 300 400 500 600 V
Operating Free-Air Temperature
Range
10 Average Rectified Forward Current at 400 mA
(or below) 25 D C Free-Air
Temperature Range
(See Note 1)
10 Average Rectified Forward Current 150 mA
at 150 D C Free-Air Temperature
(See Note 1)
I Fl'.I(surge) Peak Surge Current, One Second, 3 A
at 25 D C to 150 D C Free-Air
Temperature (See Note 2)
P Continuous Power Dissipation at (or 600 mW
below) 25 D C Free-Air Temperature
(See Note 3)
TA(oprJ Operating Free-Air Temperature -65 to 150 °C
Range
*IN645, IN647 and IN649 are available in JAN and JAN TX versions.
ELECTRICAL CHARACTERISTICS @ 25 D C Free Air Temperature (unless otherwise noted)
IN64S· 1N646 1N647 1N648 1N649
Symbol Parameter Min Max Min Max Min Max Min Max Min Max [unit Conditions
V(BR) Reverse 275 360 480 600 720 V h,=100p.A,
Breakdown
TA =100 D C
Voltage
IR Static 0.2 0.2 0.2 0.2 0.2 p.A VR=Rated VRM(wkg)
Reverse
VR = Rated VRM(wkg)l
Current 15 15 20 20 25 p.A TA =100 D C
VF
CT
Static 1 1
Foward
Voltage
Total 6 typ 6 typ
Capacitance
NOTES:
1. These values may be applied continuously
under single-phase SO-Hz half-sine-wave operation
with resistive load. Above 25°C see Thermal
Characteristics Chart.
1 1 1 V IF =400mA
6 typ 6 typ 6 typ pF VR=12V,
f=1 MHz
2. These values apply for a one-second squarewave
pulse with the device at nonoperating
thermal equilibrium immediatelly prior to the
surge.
3. Derate linearly to 200 mW at 150°C free-air
temperature at the rate of 3.2 mW/deg.
12-13