ITT - Index of

ITT
2N2904A, 2N2905A, 2N2906A., 2N2907A
SILICON GENERAL PURPOSE TRANSISTORS
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SEMICONDUCTORS
GENERAL
PURPOSE
PNP SILICON
PLANAR EPITAXIAL-­
TRANSISTORS
• High Voltage: ·60V min.
• Low VeE (sat): 0.4V@ 150mA
• hFE; guaranteed from 1 00 A to 500mA
The ITT 2N2904A-7 A are PNP silicon planar
epitaxial general purpose transistors for applications
at current ranges from 0.1 to 500mA. Low
saturation voltage and fast switching times make
the 2N2904A, 5A ideal for core driving. The flat
gain over a wide current range gives good linearity
in amplifier circuits. High breakdown voltage
allows large signal swing in switching and
amplifier. circuits. Designed to complement the ITT
2N2217 thru 2N2222 NPN types.
ABSOLUTE MAXIMUM RATINGS
2N2904A2N2904A
CHARACTERISTICS 2N2905A 2N2907AUNITS
Collector-to-Base Voltage ....................... -60 -60 Volts
Collector-to-Emitter Voltage (open base) .. -60 -60 Volts
Emitter-to-Base Voltage .......................... -5 -5 Volts
Collector Current (continuous)................ 600 600 mA
Junction Temperature (storage) ............. -65 to 200 oC
Total Power Dissipation @ Tc = 250C .... 3.0 1.8 Watts
Derating factor above 25oC .............. 17.3 10.3 mW/oC
Total Power Dissipation @ T A = 25 0C ... . 0.6 0.4 Watts
Derating factor above 25 oC .............. 3.43 2.28 mW/oC
ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted.
2N2904A
2N2905A
SYMBOL 2N2906A 2N2907A UNIT CONDITIONS
MIN. MAX. MIN. MAX.
BVcoo -60 -60 Vdc Ie= -101'A
LVCEO"l -60 -60 Vdc Ie= -10mA
BVEOO -5 -5 Vdc IE= -101'A
h,,' 40 75 Ie= -1001'A VCE= -10V
40 100 Ie= -1mA VCE= -10V
40 100 Ie= -10mA VCE= -10V
40 120 100 300 le= -150mA VCE= -10V
40 50 Ie: -500mA VtE= -10V
VeE(sat) , -0.4 -0.4 Vdc Ie= -150mA 10= -15mA
-1.6 -1.6 Vdc le= -500mA 1,= -50mA
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