ITT - Index of

2N2217, 2N2218, 2N2219
SILICON GENERAL PURPOSE TRANSISTORS
ELECTRICAL CHARACTERISTICS @ 25 0 C unless otherwise noted (continued)
Symbol Min. Max. Unit Conditions
Ic= 10mA, VCE= 10V
17 2N2217
35 2N2218
75 2N2219
I c= 1mA, V CE= 10V
12 2N2217
25 2N2218
50 2N2219
Ic= 0.1mA, VCE= 10V
20 2N2218
35 2N2219
VCE (sat) (1) 0.4 Vdc Ic= 150mA, I B= 15mA
1.6 Vdc I c= 500mA, I B= 50mA
VBE (sat) (1) 1.3 Vdc I C= 150mA, I B= 15mA
2.6 Vdc I c= 500mA, I B= 50mA
ICBO 10 nA VCB=50V,IE=0
10 A VCB = 50V, IE = 0, T = 150-C
lEBO 10 nA V EB= 3V, I c= 0
IT 250 MHz I C = 20m A, V CE= 20V
•
I
Cob 8 pi VCB= 10V, I E= 0
Re(hie) (2) 60 Ohms I C = 20mA, V CE= 20V, I = 300MHz
BVCBO 60 Vdc Ic=10 A,IE=O
VCEO (sust) (1) 30 Vdc Ic=10mA,IB=0
BVEBO 5 Vdc IE= 10 A, Ic= 0
NOTES: 1.' Pulse Measurement: width 300 sec. duty cycle 2%.
2. Real part of Common-Emitter high frequency input impedance.
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