ITT - Index of

2N3962,2N3963,2N3964,2N396S®
PNP SILICON LOW-LEVEL.
LOW-NOISE TYPE TRANSISTORS
Package: TO-18
• LOW NOISE FIGURE .............................. NF = 2.0 dB (MAX) AT 1.0 kHz
NF ='4.0 dB (MAX) AT 100 Hz
• HIGH CURRENT GAIN ........................_....... hFE = 180 (MIN) AT 1.0~A
hFE =; 250 - 500 AT 10~A
hFE = 250 - 600 AT 1.0 mA
• HIGH BREAKDWON VOLTAGE ......... LVCEO = 45. 60 AND 80 VOLTS
• EXCELLENT BETA LINEARITY ......................... FROM 1.0tLAT050mA
ABSOLUTE MAXIMUM RATINGS (Note 1)
Characteristics
Unit
Collector-Base Voltage
(2N3962. 2N3965) ..................................... -60 Volts
(2N3963) ...................... : ................................ -80 Volts
(2N3964) ....................................................... -45 Volts
Collector-Emitter Voltage (Note 4)
(2N3962. 2N3965) ..................................... -60 Volts
(2N3963) ....................................................... -80 Volts
(2N3964) ....................................................... -45 Volts
Emitter-Base Voltage
(2N3962, 2N3963, 2N3964, 2N3965) -6.0 Volts
Total Device Dissipation @:
TC = 25°C ................... , ................................. 1.2 Watts
TA = 25°C .................................................... 0.36 Watt
Storage Temperature ...................... - 65°C to +200 °c
Operating Junction Temperature .......................... 200°C
Lead Temperature
(Soldering, 60 sec Time Limit) ........................... 300 °c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
,
Symbol Min Typ Max Unit Conditions
hFE 2N3962,2N3963 60 175 Ie = 1.0 IlA VeE = -5.0 Volts
2N3964,2N3965 180 300
hFE 2N3962,2N3963 100 210 300 Ie = IOIlA VeE = -5.0 Volts
2N3964,2N3965 250 320 500
hFE 2N3962,2N3963 100 240 Ie = l00~A, VeE = -5.0 VollS
2N3964,2N3965 250 330
hFE 2N3962,2N3963 100 260 450 Ie = 1.0 mA, VeE = -5.0 Volts
2N3964,2N3965 250 330 600
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