ITT - Index of

_
I mm
.L.L __
SEMICONDUCTORS
NPN HIGH-SPEED
SWITCHING
TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
Characteristics
MPS2369
H_IG_H_-_S_PE_E_D_N_PN_S_I L_IC_O_N_S_W_IT_C_H_I_N_G_T_R_A_N_S_IS_T_O_R
Unit
Collector-Emitter Voltage ........................... 15 Vde
Collector-Emitter Voltage ........................... 40 Vde
Collector-Base Voltage ................................ 40 Vde
Emitter-Base Voltage ................................... 4.5 Vde
Collector Current-Peak ........................... 500 mAde
Total Device Dissipation
@T A = 250C .......................................... 310 mW
Derate above 250C ._ ........................ 2.81 mW/oC
Operating and Storage Junction
Temperature Range .................... -55 to +135 0c
Thermal Resistance, Junction
to Ambient ................................... 0.355 0C/mW
+'006~l"
_1.5VJi ~
-1 'OV~9"",80v-l
-4Qv I '500
3.QpF
,
__J
hFE* 40 120 - IC = 10 mAde, V CE = 1.0 Vde
20 - IC - 10 mAde, V CE - 1.0 Vde, T A - 550C
20 - IC - 100 mAde, V CE - 2.0 Vde
VCElsat) - 0.25 Vde Ie = 10 mAde, IB = 1.0 mAde
VBE(sat)*
0.70 0.85 Vde IC = 10 mAde, lR - 1.0 mAde
Cob - 4.0 pF V CB = 5.0Vde,I E = 0, f= 140kHz
h fe 5.0 - - IC = 10 mAde, VCE = 10 Vde, f = 100 MHz
ton 12 ns V CC = 3.0 Vde, V BE (off) = 1.5 Vde,
IC = 10 mAde, IB1 = ~.O mAde Figure 1
toff - 18 ns V CC = 3.0 Vde, IC = 10 mAde, IB1 = 3.0 mAde,
182 = 1.5 mAde Figure 2
t 13 ns IB1 = IB2 = IC = 10 mAde Figure 3
s
·Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%.
9-10