ITT - Index of

2N3962,2N3963,2N3964,2N3965
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Min Typ Max Unit Conditions
ICES 2N3963 0.5 10 nA VCE = -70 Volts. VEB = 0
ICES 2N3964 0.5 10 nA VCE = -40 Volts. VEB = 0
ICES(+150°C) 2N3962 2.0 10 IlA VCE = -50 Volts. VEB = 0
2N3965 0.5 10 IlA
ICES(+1500C) 2N3963 2.0 10 IlA VCE = -70 Volts. VEB = 0
ICES(+1500C) 2N3964 2.0 10 IlA VCE = -40 Volts. VEB = 0
lEBO 2N3962.2N3963 10 nA Ic = O. VEB = -4.0 Volts
2N3964.2N3965
VCE(sat) 2N3962.2N3963 -0.1 -0.25 Volt IC = 10 mA.IB = 0.5 rnA
2N3964.2N3965
VCE(sat) 2N3962.2N3963 -0.16 -0.4 Volt Ie = 50 rnA. IB = 5.0 rnA (Note 5)
2N3964.2N3965
VBE(sat) 2N3962.2N3963 -0.72 -0.9 Volt IC = 10mA.IB = 0.5 rnA
2N3964.2N3965
VBE(sat) 2N3962.2N3963 -O.Bl -0.95 Volt IC = 50 rnA: IB = 5.0 rnA (Note 5)
•
2N3964.2N3965
I
hie 2N3962.2N3963 2.5 B.O 17 kohms ·IC = 1.0 rnA. VCE = -5.0 Volts
2N3964.2N3965 6.0. 10 20 kohms
hoe 2N3962.2N3963 5.0 19 40 Ilmho IC = 1.0 rnA. VCE = -5.0Volts I
2N3964.2N3965 5.0 25 50 /lmho
hre 2N3962.2N3963 10 Xl0-4 IC = 1.0 rnA. VCE = -5.0 Volts
2N3964.2N3965
hIe 2N3962.2N3963 100 300 550 IC = 1.0 rnA. VCE = -5.0Volts
2N3964.2N3965 250 360 700
hIe 2N3962.2N3963 2.0 8.0 IC = 0.5 rnA. VCE = -5.0 Volts
2N3964.2N3965 2.5 8.0
Cobo 2N3962.2N3963 6.0 pF IE = O. VCB = -5.0Volts
2N3964.2N3965
Cibo 2N3962.2N3963 15 pF IC = O. VEB = -0.5 Volt
2N3964.2N3965
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NOTES:
(1) These ratings are limiting values above which the serviceability 01 any individual semiconductor device may be impaired.
(2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
(3) These ratings give a maximum junction temperature 01 200°C and junction-to-case thermal resistance 01 146°C/watt (derating
factor of S.85 mW/oC); junction-to-ambient thermal resistance of 48SoC/watt (derating factor of 2.0S mW/oC).
(4) This rating refers to a high-current point where collector-to-emitter voltage is lowest.
(5) Pulse Conditions: length = 300IlS; duty cycle = 1%.
9-87