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2N4248,2N4249,2N4250<br />

.SMALL SIGNAL CHARACTERISTICS (f = 1 kHz)<br />

Symbol Min Typ Max Unit Conditions<br />

hie 2N4249 2.5 8.0 17 kohms Ie = 1.0 mAo VeE = 5.0 Volts<br />

2N4250 6.0 10 20 kohms<br />

hoe 2N4249 5.0 19 40 /Lmho Ie = 1.0 mAo VeE = -5.0 Volts<br />

2N4250 5.0 25 50 /Lmho<br />

hre 2N4249.2N4250 10 xl0-4 Ie = 1.0 mAo VeE = -5.0 Volts<br />

hfe 2N4249 100 250 550 Ie = 1.0 mAo VeE = -5.0 Volts<br />

2N4250 250 350 800<br />

NOTES:<br />

(1) These ratings are limiting values above which the serviceability <strong>of</strong> any individual semiconductor device may be impaired.<br />

(2) These are steady state limits. The factory should be consulted on applications involving pulsed or low-duty cycle operations.<br />

(3) These ratings give a maximum junction temperature <strong>of</strong> 125°C and junction-ta-case thermal resistance <strong>of</strong> 20QoC/watt (derating<br />

factor <strong>of</strong> 5.0 mW/oC); junction-to·ambientthermal resistance <strong>of</strong> 500°C/watt (derating factor <strong>of</strong> 2.0 mW/oC).<br />

(4) This rating refers to a high-current point where collector to emitter voltage is lowest.<br />

(5) Pulse Conditions: length = 300 /Ls; duty cycle = 1 %.<br />

(6) RS = 10 kQ. Power Bandwidth <strong>of</strong> 150 Hz.<br />

(7) RS = 10 kQ . Power Bandwidth <strong>of</strong> 15.7 kHz with 3.0 dB points at 10Hz and 10kHz.<br />

(8) RS = 1.0 kQ. Power Bandwidth <strong>of</strong> 150 Hz.<br />

9-92

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