ITT - Index of

Package TO-92
2N5372 thru 2N5375
GENERAL PU RPOSE PNP SI LICON TRANSISTORS
ABSOLUTE MAXIMUM RATINGS@ 250 C (free air)
Continuous device dissipation at or
Characteristics Unit below 250 C free-air temperature ........... 360 mW
Storage temperature range ............ , ... -55 to +150 0c
Operating Collector
Junction Temperature .......................... +150 0 C
Lead temperature 1/16" from case
10 seconds max ................................... +260 0 C
Collector current ......................................... 500 mA
ELECTRICAL CHARACTERISTICS @ 250 C free-air temperature
Linear derating factor above
250 C ............................................. 2.87 mW/oC
Emitter-base voltage .......................................... 5 V
Collector-base voltage ...................................... 60 V
Collector-base voltage (2N5375) ..._................... 40 V
Collector-emitter voltage (Applicable
Symbol Min Max Unit Conditions
from I C = 0 mA to I C - 10 mA .................... 30 V
ICSO - 50 nA 2N5372, 2N5373, 2N5374
V CS =40V,I E =0
- 50 nA 2N5375 V CE - 30 V, IE - 0
lEBO - 50 nA V ES -3V,I C -0
BVCSO 60 - V 2N5372,2N5373,2N5374
I C =10uA,I E =0
40 - V 2N5375 I C -10uA,I E =0
BV ESO 5 - V I E =10uA,I C =0
BV CEO 30 - V IC - 10 mA, IS - 0 (Note 1)
hFE 20 - - 2N5372
50 - - 2N5373
100 - - 2N5374 V CE =10V,I C =1mA
20 - - 2N5375
hFE 30 - - 2N5372
75 - - 2N5373
150 - - 2N5374 VCE = 10 V, IC = 10 mA (Note 1)
30 - - 2N5375
hFE 40 120 - 2N5372
100 300 - 2N5373
200 400 - 2N5374 VCE = 10 V, IC= 150 mA (Note 1)
40 400 - 2N5375
V SE - 1.2 V VCE - 10 V, IC - 150 mA (Note 1)
VSE(sat)
- 1.3 V Ie = 150 mA, IS = 15 mA (Note 1)
VCE(sat)
- 0.3 V IC - 150 mA, IB - 15 mA (Note 1)
C cb - 10 pF V CB =10V,I E =0,f=1MHz(Note2)
[hfel 1.5 - - VCE -10 V, IC - 20 mA,f= 100 MHz
t
on
- 50 nsec IC - 150 mA, VCC - 30 V, IB1 - 15 mA,
(see fig. 1)
toff - 150 nsec 2N5372,2N5373 Ie = .150 mA, V CC = 6 V,
- 175 usec 2N5374,2N5375 IS 1 = ! S2 = 15 mA (see fig. 2)
NOTES: 1. Pulse test: PW = 300 usec, duty cycle ~ 2%.
2. C cb measurement em ploys a th ree-terminal capacitance bridge incorporating a guard circuit. The
emitter terminal shall be connected to the guard terminal of the bridge.
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