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Package: To-92<br />

2N5226<br />

MEDIUM POWER PNPSILICON AMPLIFIER TRANSISTOR<br />

ABSOLUTE MAXIMUM RATINGS<br />

Characteristic<br />

Unit<br />

Collector-Emitter Voltage _...... uu ••• u ••••• u •••• 25 Vdc<br />

Collector-Base Voltage ................................ 25 Vdc<br />

Emitter-Base Voltage u ••••••••••••••••••••••••••••••••• 4.0 Vdc<br />

Collector Current .................................... 500 mAdc<br />

Tota' Device Dissipation @T A = 250 C ........ 310 mW<br />

Derate above 250 C ......................_.. 2.81 mW/oC<br />

Operating and Storage Junction<br />

Temperature Range .................... -55 to +135 0c<br />

Therma' Resistance, Junction<br />

to Ambient ................................... 0.357 0C/mW<br />

ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)<br />

Symbol Min Max Unit Con·ditions<br />

BV CEO 25 - Vdc IC = 10.mAdc, 'B = 0<br />

BV CBO 25 - Vdc IC 100 uAdc, IE - 0<br />

BV EBO 4.0 - Vdc IE = 100uAdc, IC - 0<br />

-<br />

'CBO<br />

300 nAdc V CB -15Vdc,'E- 0<br />

- 500<br />

'EBO<br />

nAdc V BE - 4.0 Vdc, IC - 0<br />

hFE 25 - - IC - 10 mAde, V CE - 10 Vdc<br />

30 600 'C - 50 mAde, V CE - 10 Vdc<br />

VCE(sat)<br />

- 0.8 Vdc 'C - 100 mAde, 'B = 10 mAde<br />

VBE(sat)<br />

- 1.0 Vdc 'C - 100 mAde, 'B - 10 mAde<br />

fT 50 - MHz IC - 20 mAde, V CE = 10 Vdc<br />

C cb - 20 pF V CB = 5.0 Vdc, IE = 0, f - 1.0 MHz<br />

h fe 30 1800 - 't = 50 mAde, V CE - 10 Vdc, f - 1.0 kHz<br />

9-110

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