ITT - Index of

Package: To-92
··2N5220.
LOW-POWER GENERAL PURPOSE NPN SILICON AiVlPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Characteristics
Unit
Collector-Emitter Voltage .............................. 15 Vdc
Collector-Base Voltage ...............•................. 15 Vdc
Emitter-Base Voltage ................................... 3.0 Vdc
Collector Current - Continuous •...••......... 500 mAde
Total Device Dissipation @T A = 250C •....... 310 mW
Derate above 250C .....................•.. 2.81 mW/oC
Operating and Storage Junction
Temperature Range .................... -55 to +135 0c
Thermal Resistance, Junction
to Ambient ..............•..............•..... 0.357 0C/mW
ELECTRICAL CHARACTERISTICS (T A = 250C unless otherwise noted)
Symbol Min Max Unit Conditions
BV CEO 15 - Vdc IC = 10 mAde, IR = 0
BV CBO 15 - Vdc IC - 100 uAdc, IE = 0
BV EBO 3.0 - Vdc IE -100uAde,I C - 0
ICBO 100 nAdc VCB - 10 Vdc, IE - 0
lEBO - 100 nAdc V BE - 3.0 Vdc,I C - 0
hFE 25 - IC -10 mAde, V CE = 10 Vdc
30 600 IC - 50 mAde, V CE - 10 Vdc
VCE(sat) - 0.5 Vdc IC -150 mAde, IB = 15 mAde
vBE(sat) 1.1 Vdc IC = 150 mAdc,lR = 15 mAde
fT 100 - MHz IC - 20 mAde, V CE - 10 Vdc
C cb 10 pF V ca= 5.0 Vdc, IE = 0, f = 1.0 MHz
h fe 30 1800 - IC.- 50 mAde, V CE - 10 Vdc, f - 1.0 kHz
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