SIMPLORER User Manual V6.0 - FER-a

4
5
122 Modeling with Circuit Components
4.5 Semiconductors Device Level
• Diode
• IGBT
• FET
• BJT
• OPV
• GTO
• Thyristor
Dynamic Diode Model
Electrical Model
>>Basics>Circuit>Semiconductors Device Level
The diode model is a modular model with definable simulation levels. Different simulation
depths can be selected for the electrical and thermal behavior of the model.
You can define three simulation levels for both the electrical and thermal behavior. Each level
combination has a certain set of parameters. The values of them can be defined in the model
dialog. The component outputs are true of all types of the diode models. They are listed at the
end of the model description.
Dialog Settings
� «Electrical Behavior Level»
In the list, select the Electrical Behavior Level—0,1, 2, or 3.
� «Electrical Parameters»
Define the electrical diode parameters according to the selected electrical behavior level.
Look their meaning up in the parameter table below. Common parameter types. Enter a numerical
value, a variable, or an expression in the text box.
� «Thermal Behavior Level»
In the list, select the Thermal Behavior Level —0,1, or 2.
� «Thermal Parameters»
Define the thermal diode parameters according to the selected thermal behavior level. Look
their meaning up in the parameter table below. Common parameter types. Enter a numerical
value, a variable, or an expression in the text box.
The model uses an electrical equivalent circuit.There are
three simulation levels regarding the electrical behavior.
TYPE_DYN=0
Only the static behavior is calculated. The charges at the
capacitances are ignored, no switching behavior.
TYPE_DYN=1
In addition to the static behavior, charging and discharging
of junction and diffusion capacitance are calculated.
TYPE_DYN=2 and DYN=3
If this level is selected, an additional current source to
model the reverse recovery behavior is used.