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SIMPLORER User Manual V6.0 - FER-a

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4<br />

5<br />

130 Modeling with Circuit Components<br />

The static current of the FWD (if enabled) and the current into the base of the BJT follows the<br />

formula:<br />

V AK<br />

⎛ ---------------- ⎞<br />

M ⋅ VT I I ⎜<br />

S e – 1⎟<br />

k ⋅ ( TEMP_JNCT + 273K)<br />

= ⋅<br />

V<br />

⎜ ⎟ T = ---------------------------------------------------------------q<br />

⎝ ⎠<br />

k = Boltzmann constant (1.381E-23) q =<br />

Elementary charge (1.602E-19)<br />

The saturation current IS is temperature dependent and is calculated using the parameter<br />

ISAT0 and the actual junction temperature imported from the thermal model.<br />

The model has a built-in fault detection. During the simulation the collector current, the voltage<br />

drop from gate to emitter and from collector to emitter as well as the junction temperature<br />

are observed. If their limitations are exceeded the model behavior changes. The switches controlled<br />

by the FAULT flags are closed and the respective fault resistances determine the model<br />

characteristic. If an over voltage occurs across Gate-Emitter, only RFAULT_GE comes into<br />

effect. All other faults effect the RFAULT_CE.<br />

Component Parameters<br />

Description [Unit] Parameter Name Data Type<br />

Saturation Factor of internal FET A_FET real<br />

Exponential Cofficient of A_FET ALPHA_AFET real<br />

Saturation Exponent of internal FET M_FET real<br />

Exponential Cofficient of M_FET ALPHA_MFET real<br />

Exponent of Transfer Characteristic of FET N_FET real<br />

Exponential Cofficient of N_FET ALPHA_NET real<br />

Transistor Constant of FET at TEMP0 K0 real<br />

Exponential Temperature Cofficient of K ALPHA_K real<br />

Pinch-off-Voltage of FET at TEMP0 [V] VP0 real<br />

Exponential Temperature Cofficient of VP ALPHA_VP real<br />

Channel Lenght Modulation Factor of FET [1/V] KLM real<br />

Band Gap Voltage of FET [V] VGAP real<br />

Current Gain of BJT at TEMP0 BN0 real<br />

Saturation Current of BJT Base at TEMP0 [A] ISAT0_BJT real<br />

Exponential Temperature Cofficient of ISAT ALPHA_ISAT_BJT real<br />

Ideality Factor of BJT Base at TEMP0 M0_BJT real<br />

Linear Temperature Cofficient of M_BJT [Ω] ALPHA_M_BJT real<br />

Bulk Resistance of BJT Base [Ω] RB0 real<br />

BJT Base Shut [Ω] RP_BJT real<br />

Collector Connector Resistance [Ω] RC real<br />

Emitter Connector Resistance [Ω] RE real<br />

Internal Gate Resistance for Switching On [Ω] RGON real<br />

Exponential Temperature Cofficient of RGON ALPHA_RGON real<br />

Linear Current Cofficient of RGON KAPPA_RGON real<br />

Linear Voltage Cofficient of RGON SIGMA_RGON real

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