SIMPLORER User Manual V6.0 - FER-a

4
5
160 Modeling with Circuit Components
«Name»«Default»«Unit»«Description»
Displays the parameter names and their corresponding unit, default value, and description.
You cannot make changes in these fields. If you want to add user-specific information to a
parameter, use the «Info» field in the component output dialog.
BSIM2 Model
>>Basics>Circuit>Spice-Compatible Models>Field-Effect Transistors
The Spice-Compatible BSIM2 N-channel and BSIM2 P-channel models simulate the electrical
and thermal behavior of small-geometry MOSFETs using the parameters and equations of the
BSIM2 MOSFET model. Electrical characteristics and the temperature dependence of MOS-
FET behavior are calculated according to user-defined device parameters that are obtained
from MOSFET process characterization. This model is also referred to as MOS level 5.
See also Massobrio, Giueseppe, and Paolo Antognetti: Semiconductor Device Modeling with
SPICE, New York: McGraw Hill, 1993
Current and Voltage Reference Arrow System
Dialog Settings
� «Value»
Click the «Value» field of the corresponding parameter to define a value. Common parameter
types. Enter a numerical value, a variable, or an expression. The parameters can be set only
at the beginning of a simulation.
Look the parameter meaning up in the info lines of the parameter table (online help).
«Name»«Default»«Unit»«Description»
Displays the parameter names and their corresponding unit, default value, and description.
You cannot make changes in these fields. If you want to add user-specific information to a
parameter, use the «Info» field in the component output dialog.
BSIM3 Model
IG
+ GATE
VGS
−
DRAIN ID −
VBD
IB +
BULK +
VBS
ISRC −
SOURCE
+
VDS
−
>>Basics>Circuit>Spice-Compatible Models>Field-Effect Transistors
The Spice-Compatible BSIM3 N-channel and BSIM3 P-channel models simulate the electrical
and thermal behavior of small-geometry MOSFETs using the parameters and equations of the
BSIM3 MOSFET model. Electrical characteristics and the temperature dependence of MOS-
FET behavior are calculated according to user-input device parameters that are obtained from
MOSFET process characterization.
See also information on the Web site of UC Berkeley Device Group at
http://www-device.eecs.berkeley.edu/~bsim3/