SIMPLORER User Manual V6.0 - FER-a

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148 Modeling with Circuit Components
Component Parameters
Description [Unit] Parameter Name Data Type
Saturation Current [A], static parameter IS real
Forward Emission Coefficient, static parameter NF real
Reverse Emission Coefficient, static parameter NR real
Bulk Resistance Anode [Ω], static parameter RA real
Bulk Resistance Gate [Ω], static parameter RG real
Bulk Resistance Cathode [Ω], static parameter RC real
Amplification Factor, static parameter K real
Carrier lifetime [s], dynamic parameter TT1 real
Carrier lifetime [s], dynamic parameter TT2 real
Carrier lifetime [s], dynamic parameter TT3 real
Junction Capacitance [F], dynamic parameter CJO1 real
Junction Capacitance [F], dynamic parameter CJO2 real
Junction Capacitance [F], dynamic parameter CJO3 real
Component Nodes
Description Node Name Nature
Anode Pin ANODE electrical
Gate Pin GATE electrical
Cathode Pin CATHODE electrical
Dynamic Thyristor Model
>>Basics>Circuit>Semiconductors Device Level
The model is a macro implementation of a dynamic thyristor model. The static behavior of the
model (normal mode and reverse operation) is determined by static diode models and current
controlled current sources. The dynamic behavior is determined by nonlinear capacitances
(junction and diffusion capacitances).
All diode models use an exponential characteristic with the same value of saturation current
defined by the model parameter IS (see figure below). The emission coefficients NF and NR
effect the thermal voltages of the internal diode models. NF effects the diodes at the Anode
and Cathode; NR is used for the diodes DMPNP and DMNPN which model the reverse operation
mode of the thyristor.
For all current amplification factors in common mode constant values are used. The current
amplification of ITCNNPN is adjustable by the parameter K. Recommended values for K are
in the range of 0,01 to 0,5.
The model does not consider the influence of critical rates of change in voltage and current in
the outer circuit on the switching behavior of the thyristor. Due to the short time constants of
the systems, a small value of the minimum step size (usually some nanoseconds) should be
set. In the following the influences of the parameters on the model behavior are listed: