SIMPLORER User Manual V6.0 - FER-a

SIMPLORER 6.0 — Manual 161
BSIM3 and BSIM4 are developed by the Device Research Group of the Department of Electrical
Engineering and Computer Science, University of California, Berkeley and copyrighted by
the University of California.
Current and Voltage Reference Arrow System
Dialog Settings
� «Value»
Click the «Value» field of the corresponding parameter to define a value. Common parameter
types. Enter a numerical value, a variable, or an expression. The parameters can be set only
at the beginning of a simulation.
Look the parameter meaning up in the info lines of the parameter table (online help).
«Name»«Default»«Unit»«Description»
Displays the parameter names and their corresponding unit, default value, and description.
You cannot make changes in these fields. If you want to add user-specific information to a
parameter, use the «Info» field in the component output dialog.
BSIM4 Model
IG
+ GATE
VGS
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DRAIN ID −
VBD
IB +
BULK +
VBS
ISRC −
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VDS
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>>Basics>Circuit>Spice-Compatible Models>Field-Effect Transistors
The Spice-Compatible BSIM4 N-channel and BSIM4 P-channel models simulate the electrical
and thermal behavior of small-geometry MOSFETs using the parameters and equations of the
BSIM4 MOSFET model. Electrical characteristics and the temperature dependence of MOS-
FET behavior are calculated according to user-defined device parameters that are obtained
from MOSFET process characterization.
See also information on the Web site of UC Berkeley Device Group at
http://www-device.eecs.berkeley.edu/~bsim3/
BSIM3 and BSIM4 are developed by the Device Research Group of the Department of Electrical
Engineering and Computer Science, University of California, Berkeley and copyrighted by
the University of California.
Current and Voltage Reference Arrow System
IG
+ GATE
VGS
−
DRAIN ID −
VBD
IB +
BULK +
SOURCE
VBS
ISRC −
+
VDS
−