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SIMPLORER User Manual V6.0 - FER-a

SIMPLORER User Manual V6.0 - FER-a

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4<br />

5<br />

158 Modeling with Circuit Components<br />

«Name»«Default»«Unit»«Description»<br />

Displays the parameter names and their corresponding unit, default value, and description.<br />

You cannot make changes in these fields. If you want to add user-specific information to a<br />

parameter, use the «Info» field in the component output dialog.<br />

MOS3 Model<br />

>>Basics>Circuit>Spice-Compatible Models>Field-Effect Transistors<br />

The Spice-Compatible MOS3 N-channel and MOS3 P-channel models simulate the electrical<br />

and thermal behavior of MOSFETs using the parameters and equations of the SPICE3 Level 3<br />

MOSFET model. Electrical characteristics and the temperature dependence of MOSFET behavior<br />

are calculated according to user-defined device parameters.<br />

See also Massobrio, Giueseppe, and Paolo Antognetti: Semiconductor Device Modeling with<br />

SPICE, New York: McGraw Hill, 1993<br />

Current and Voltage Reference Arrow System<br />

Dialog Settings<br />

� «Value»<br />

Click the «Value» field of the corresponding parameter to define a value. Common parameter<br />

types. Enter a numerical value, a variable, or an expression. The parameters can be set only<br />

at the beginning of a simulation.<br />

Look the parameter meaning up in the info lines of the parameter table (online help).<br />

«Name»«Default»«Unit»«Description»<br />

Displays the parameter names and their corresponding unit, default value, and description.<br />

You cannot make changes in these fields. If you want to add user-specific information to a<br />

parameter, use the «Info» field in the component output dialog.<br />

MOS6 Model<br />

IG<br />

+ GATE<br />

VGS<br />

−<br />

DRAIN ID −<br />

VBD<br />

IB +<br />

BULK +<br />

VBS<br />

ISRC −<br />

SOURCE<br />

+<br />

VDS<br />

−<br />

>>Basics>Circuit>Spice-Compatible Models>Field-Effect Transistors<br />

The Spice-Compatible MOS6 N-channel and MOS6 P-channel models simulate the electrical<br />

and thermal behavior of MOSFETs using the parameters and equations of the SPICE3 Level 6<br />

MOSFET model. Electrical characteristics and the temperature dependence of MOSFET behavior<br />

are calculated according to user-defined device parameters.<br />

See also Massobrio, Giueseppe, and Paolo Antognetti: Semiconductor Device Modeling with<br />

SPICE, New York: McGraw Hill, 1993

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