SIMPLORER User Manual V6.0 - FER-a

SIMPLORER 6.0 — Manual 131
Internal Gate Resistance for Switching OFF [Ω] ROFF real
Exponential Temperature Cofficient of RGOFF ALPHA_RGOFF real
Linear Current Cofficient of RGOFF KAPPA_RGOFF real
Linear Voltage Cofficient of RGOFF SIGMA_RGOFF real
Reference Temperature [°C] TEMP0 real
Breakthrough Collector-Emitter Voltage [V] VBREAK_CE real
Breakthrough Gate-Emitter Voltage [V] VBREAK_GE real
Breakthrough Collector Current [A] IBREAK real
Breakthrough Junction Temperature [°C] TEMPBREAK real
Breakthrough Junction Temperature [°C] TEMPBREAK real
Collector-Emitter Resistance after Fault [Ω] RFAULT_CE real
Gate-Emitter Resistance after Fault [Ω] RFAULT_GE real
Electrical Behavior Level, Type DYN=1
All capacitance between the terminals are modeled the same way. A distinction is made between
a region where a depletion capacitance is calculated and a region with enhancement
capacitance behavior. The curves remain differentiable even at the transition from one region
to the other. The transition happens if the difference of a defined fraction of the diffusion and
the voltage across the junction equals zero according to
SHIFT ⋅ VDIFF – VJNCT = V∗JNCT = 0
For positive values of V* JNCT (enhancement region) the following formula is used to calculate
the capacitance
⎛ ⎛ – ------------------------------------------------------------------------------------⎞⎞
( BETA – 1)
⋅ VDIFF
( ) = C0 ⋅ ⎜1+ ( BETA – 1)
⋅ ⎜1 – e
⎟⎟
⎜ ⎜ ⎟⎟
⎝ ⎝ ⎠⎠
CV∗ JNCT
V∗JNCT ⋅ ALPHA ⋅ ( 1 – DELTA)
At negative values of V* JNCT (depletion region) the following formula applies
1 – DELTA
( ) C0 DELTA
1 V∗
⎛ JNCT
– ------------------- ⎞
⎝ VDIFF⎠
APHA
⎛ ⎞
⎜ ⎟
= ⋅ ⎜ + ----------------------------------------------- ⎟
⎜ ⎟
⎝ ⎠
CV∗ JNCT
The diffusion capacitances at the base-emitter path of the BJT and at the FWD are modeled
using the same approach:
Cdiff TAU it () ISAT +
= ⋅ ----------------------------
M⋅VT To damp the oscillations that may occur in the system, additional damping resistances are
placed in the model. The values of the damping resistances depend on the parameter DAMP-
ING, the values of the parasitic inductances and the values of the internal capacitances.
L
RDAMP =
DAMPING ⋅ ------------
CV ( )