SIMPLORER User Manual V6.0 - FER-a

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156 Modeling with Circuit Components
BJT Models
>>Basics>Circuit>Spice-Compatible Models>Bipolar Junction Transistors
The Spice-compatible BJT NPN-type, BJT PNP-type, BJT4 NPN-type, and BJT4 PNP-type
models simulate the electrical and thermal behavior of a bipolar junction transistor using
SPICE3 parameters and equations. Electrical characteristics and the temperature dependence
of transistor behavior are calculated according to user-defined device parameters.
See also Massobrio, Giueseppe, and Paolo Antognetti: Semiconductor Device Modeling with
SPICE, New York: McGraw Hill, 1993
Current and Voltage Reference Arrow System
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Dialog Settings
� «Value»
Click the «Value» field of the corresponding parameter to define a value. Common parameter
types. Enter a numerical value, a variable, or an expression. The parameters can be set only
at the beginning of a simulation.
Look the parameter meaning up in the info lines of the parameter table (online help).
«Name»«Default»«Unit»«Description»
Displays the parameter names and their corresponding unit, default value, and description.
You cannot make changes in these fields. If you want to add user-specific information to a
parameter, use the «Info» field in the component output dialog.
4.6.4 Field-Effect Transistors
The field-effect transistor components are implemented as C models. The models use the
MaxwellSpice.dll file. The simulation parameter HMIN (minimum time step) should be 0.1ns
for the first simulation run. Then you can adjust the value for optimal simulation performance.
For simulations of power electronics circuits, HMIN can be up to 100ns.
MOS1 Model
COLLECTOR
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>>Basics>Circuit>Spice-Compatible Models>Field-Effect Transistors
The Spice-Compatible MOS1 N-channel and MOS1 P-channel models simulate the electrical
and thermal behavior of MOSFETs using the parameters and equations of the SPICE3 Level 1
MOSFET model. Electrical characteristics and the temperature dependence of MOSFET behavior
are calculated according to user-defined device parameters.
See also Massobrio, Giueseppe, and Paolo Antognetti: Semiconductor Device Modeling with
SPICE, New York: McGraw Hill, 1993
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VBE
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