SIMPLORER User Manual V6.0 - FER-a

Component Parameters
SIMPLORER 6.0 — Manual 137
Description [Unit] Parameter Name Data Type
Transistor Constant at TEMP0 [A/V²] K0 real
Pinch-off-Voltage at TEMP0 [V] VP0 real
Bulk Control Factor BCF real
Bulk Doping [1/cm³] NBULK real
Channel Doping [1/cm³] NCH real
Channel Lenght Modulation Factor KLM real
Saturation Factor A_FET real
Saturation Exponent M_FET real
Exponent of Transfer Characteristic N_FET real
Ideality Factor of Gate Diode; only JFET M0_GATE real
Saturation Diode of Gate Diode; only JFET ISAT0_GATE real
Bulk Resistance of Gate Diode; only JFET RB0_GATE real
Reference Temperature [°C] TEMP0 real
Band Gap Voltage [V] VGAP real
Linear Temperature Coefficient of VP ALPHA_VP real
Exponential Temperature Coefficient of Transistor Constant ALPHA_K real
Exponential Temperature Coefficient of A_FET ALPHA_AFET real
Exponential Temperature Coefficient of M_FET ALPHA_MFET real
Exponential Temperature Coefficient of N_FET ALPHA_NFET real
Breakthrough G-S-Voltage [V] VBREAK_DS real
Breakthrough Drain-Source-Voltage [V] VBREAK_GS real
Breakthrough Drain Current [A] IBREAK real
Breakthrough Junction Temperature [°C] TEMPBREAK real
Drain-Source-Resistance after Fault [Ω] RFAULT_DS real
Gate-Source-Resistance after Fault [Ω] RFAULT_GS real
Drain Connector Resisance RD real
Gate Connector Resistance RG real
Source Connector Resistance RS real
Electrical Behavior Level, Type DYN=1
Apart from the constant gate-source-capacitance, all capacitances are modeled in the same
way. A distinction is made between a region where a depletion capacitance is calculated and
a region with enhancement capacitance behavior. The curves remain differentiable even at
the transition from one region to the other. The transition happens if the difference of a defined
fraction of the diffusion and the voltage across the junction equals zero according to:
SHIFT ⋅ VDIFF – VJNCT = V∗JNCT =
0