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MMC2107 - Freescale Semiconductor

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<strong>Freescale</strong> <strong>Semiconductor</strong>, Inc.<br />

Non-Volatile Memory FLASH (CMFR)<br />

Functional Description<br />

Table 9-7. Program Interlock State Descriptions (Continued)<br />

State<br />

Mode<br />

Next<br />

State<br />

Transition Requirement<br />

nc...<br />

<strong>Freescale</strong> <strong>Semiconductor</strong>, I<br />

S3<br />

S4<br />

S5<br />

Expanded program hardware interlock<br />

operation: Program margin reads.<br />

Programming writes accepted; all eight<br />

program pages can be programmed. Writes<br />

can be to any array location. Program page<br />

buffers updated using only data, lower<br />

address, and block address. Normal register<br />

accesses. CMFRCTL write can change<br />

EHV. If write is to a register, no data is<br />

stored in program page buffer.<br />

Program operation: High voltage applied to<br />

array or shadow information to program<br />

CMFR bitcells. Pulse width timer active if<br />

SCLKR[2:0] ≠ 0; HVS can be polled to time<br />

program pulse. Programming writes not<br />

accepted. During programming, array<br />

cannot be accessed (bus error). Normal<br />

register accesses. CMFRCTL write can<br />

change only EHV.<br />

Program margin read operation: Reads<br />

determine if bits on selected page need<br />

modification by program operation. Once bit<br />

is fully programmed, data stored in program<br />

page is updated; no further programming<br />

occurs for that bit and value read is 0.<br />

While it is not necessary to read all words on a<br />

page to determine if another program pulse<br />

is needed, all pages being programmed<br />

must be read once after each program<br />

pulse.<br />

S1 T6 Write SES = 0 or master reset<br />

S4 T4 Write EHV = 1<br />

S1 T7 Master reset<br />

S5 T5 EHV = 0 and HVS = 0<br />

S4 T8 Write EHV = 1<br />

S1 T9 Write SES = 0 or a master reset<br />

9.8.4.2 Program Margin Reads<br />

The CMFR provides a program margin read with electrical margin for the<br />

program state. Program margin reads provide sufficient margin to<br />

assure specified data retention. The program margin read is enabled<br />

when SE = 1 and a programming write has occurred. To increase the<br />

access time of the program margin read the off-page access time is 17<br />

clocks instead of the usual 2-clock off-page read access time. The<br />

program margin read and subsequent on-page program verify reads<br />

<strong>MMC2107</strong> – Rev. 2.0<br />

Technical Data<br />

MOTOROLA Non-Volatile Memory FLASH (CMFR) 211<br />

For More Information On This Product,<br />

Go to: www.freescale.com

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