MMC2107 - Freescale Semiconductor

Electrical Specifications
Freescale Semiconductor, Inc.
11. Maximum source impedance is application-dependent. Error resulting from pin leakage depends on junction leakage into
the pin and on leakage due to charge-sharing with internal capacitance. Error from junction leakage is a function of external
source impedance and input leakage current. In the following expression, expected error in result value due to junction
leakage is expressed in voltage (V ERRJ ):
V ERRJ = R S x I Off
where:
I Off is a function of operating temperature.
Charge-sharing leakage is a function of input source impedance, conversion rate, change in voltage between successive
conversions, and the size of the filtering capacitor used. Error levels are best determined empirically. In general, continuous
conversion of the same channel may not be compatible with high-source impedance.
12. For a maximum sampling error of the input voltage ≤ 1 LSB, then the external filter capacitor, C f ≥ 1024 x C SAMP . The value
of C SAMP in the new design may be reduced.
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Freescale Semiconductor, I
22.10 FLASH Memory Characteristics
1. Maximum pulses vary with V PP .
The FLASH memory characteristics are shown in Table 22-9,
Table 22-10, Figure 22-2, and Figure 22-1.
Table 22-9. FLASH Program and Erase Characteristics
(V DDF = 3.135 to 3.465 V, V PP = 4.75 to 5.25 V, T A = T L to T H )
Parameter Symbol Min Typ Max Unit
Number of erase pulses E Pulse 8 8 20 —
See Table 9-11. Required Erase Algorithm
Erase pulse time t Erase
on page 219.
Erase recovery time t E_Off 4.0 4.8 6.0 µs
Number of program pulses P Pulse — 500 Note 1 —
See Table 9-9. Required Programming
Program pulse time t PROG
Algorithm on page 213.
Program recovery time t P_Off 4.0 4.8 6.0 µs
Table 22-10. FLASH EEPROM Module Life Characteristics
(V DDF = 2.7 to 3.6 V, V PP = 4.75 to 5.25 V, T A = T L to T H )
Parameter Symbol Value Unit
Maximum number of guaranteed program/ erase cycles (1) P/E 100 (2) Cycles
Data retention at average operating temperature of 85°C Retention 10 Years
1. A program/erase cycle is defined as switching the bits from 1 ➝ 0 ➝ 1.
2. Reprogramming of a FLASH array block prior to erase is not required.
Technical Data MMC2107 – Rev. 2.0
594 Electrical Specifications MOTOROLA
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