09.02.2018 Views

Practical Guige to Free Energy Devices

eBook 3000 pages! author: Patrick J. Kelly "This eBook contains most of what I have learned about this subject after researching it for a number of years. I am not trying to sell you anything, nor am I trying to convince you of anything. When I started looking into this subject, there was very little useful information and any that was around was buried deep in incomprehensible patents and documents. My purpose here is to make it easier for you to locate and understand some of the relevant material now available. What you believe is up to yourself and is none of my business. Let me stress that almost all of the devices discussed in the following pages, are devices which I have not personally built and tested. It would take several lifetimes to do that and it would not be in any way a practical option. Consequently, although I believe everything said is fully accurate and correct, you should treat everything as being “hearsay” or opinion. Some time ago, it was commonly believed that the world was flat and rested on the backs of four elephants and that when earthquakes shook the ground, it was the elephants getting restless. If you want to believe that, you are fully at liberty to do so, however, you can count me out as I don’t believe that. " THE MATERIAL PRESENTED IS FOR INFORMATION PURPOSES ONLY. SHOULD YOU DECIDE TO PERFORM EXPERIMENTS OR CONSTRUCT ANY DEVICE, YOU DO SO WHOLLY ON YOUR OWN RESPONSIBILITY -- NEITHER THE COMPANY HOSTING THIS WEB SITE, NOR THE SITE DESIGNER ARE IN ANY WAY RESPONSIBLE FOR YOUR ACTIONS OR ANY RESULTING LOSS OR DAMAGE OF ANY DESCRIPTION, SHOULD ANY OCCUR AS A RESULT OF WHAT YOU DO. ​

eBook 3000 pages!
author: Patrick J. Kelly

"This eBook contains most of what I have learned about this subject after researching it for a number of years. I am not trying to sell you anything, nor am I trying to convince you of anything. When I started looking into this subject, there was very little useful information and any that was around was buried deep in incomprehensible patents and documents. My purpose here is to make it easier for you to locate and understand some of the relevant material now available. What you believe is up to yourself and is none of my business. Let me stress that almost all of the devices discussed in the following pages, are devices which I have not personally built and tested. It would take several lifetimes to do that and it would not be in any way a practical option. Consequently, although I believe everything said is fully accurate and correct, you should treat everything as being “hearsay” or opinion.

Some time ago, it was commonly believed that the world was flat and rested on the backs of four elephants and that when earthquakes shook the ground, it was the elephants getting restless. If you want to believe that, you are fully at liberty to do so, however, you can count me out as I don’t believe that. "

THE MATERIAL PRESENTED IS FOR INFORMATION PURPOSES ONLY. SHOULD YOU DECIDE TO PERFORM EXPERIMENTS OR CONSTRUCT ANY DEVICE, YOU DO SO WHOLLY ON YOUR OWN RESPONSIBILITY -- NEITHER THE COMPANY HOSTING THIS WEB SITE, NOR THE SITE DESIGNER ARE IN ANY WAY RESPONSIBLE FOR YOUR ACTIONS OR ANY RESULTING LOSS OR DAMAGE OF ANY DESCRIPTION, SHOULD ANY OCCUR AS A RESULT OF WHAT YOU DO.

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i.e., the pho<strong>to</strong>-voltage is proportional <strong>to</strong> n o which can be reasonably assumed proportional <strong>to</strong> intensity which is<br />

experimentally observed (see Fig.4).<br />

The model just described explains the long wave length pho<strong>to</strong>-emfs, in the material Pb( 0.53 Zr, 0.47 Ti)0 3 + 1% by<br />

weight of Nb 2 0 5 . Such a deep trapping level is probably typical of the lead titanate-lead zirconate materials with<br />

characteristic lead vacancies. These bind electrons leaving holes (producing p type dark conductivity). The<br />

addition of common dopants -- for example niobium gives rise <strong>to</strong> free electrons which combine with holes or get<br />

trapped by the lead vacancies. The doping can thus be said <strong>to</strong> provide electrons which fill traps.<br />

It is these trapped electrons which are pho<strong>to</strong>-injected in<strong>to</strong> the conduction band by the long wave length light<br />

providing near maximum pho<strong>to</strong>-emfs in material illuminated at 500 nm and even longer wave lengths as shown in<br />

the results plotted in Fig.13. Full saturation, that is the complete shielding of the bulk internal field, requires<br />

however band gap carriers which occurs as one approaches the 373 nm band gap wave length. Solving this<br />

problem, that of band gap carriers in addition <strong>to</strong> electrons generated by deep traps, can be accomplished in a<br />

manner similar <strong>to</strong> that which was accomplished for the trapped electrons but is more complex for example<br />

because mobile holes are being produced in addition <strong>to</strong> electrons and one cannot necessarily fix the maximum<br />

number of carriers.<br />

The pho<strong>to</strong>-emfs are created by pho<strong>to</strong>-induced carriers shielding the bulk field. Effectively, no pho<strong>to</strong>-current can<br />

flow however unless band gap light is present as is clear from the results shown in Fig.12 and Fig.13. Here it is<br />

clear the band gap light produces maximum pho<strong>to</strong>-emf and maximum pho<strong>to</strong>-currents, less than band gap light,<br />

maximum or almost maximum pho<strong>to</strong>-emf but no pho<strong>to</strong>-currents and that the output resistance under these<br />

circumstances appears extremely high. Addition of band gap light allows current <strong>to</strong> flow.<br />

The tentative explanation is that the surface layers from high resistance barriers, the magnitude of which lowers<br />

with band gap light. The surface layers thus act as intrinsic pho<strong>to</strong>conduc<strong>to</strong>rs in series with an emf. This picture not<br />

only explains the rather unique dependence of pho<strong>to</strong>-emf and short circuit pho<strong>to</strong>-current on wave length as shown<br />

in Fig.12 and Fig.13 but also the equivalent circuit which is typical of all these materials as described in Fig.2 and<br />

as indicated by the current-voltage results in Fig.3.<br />

A possible explanation for the high resistance of the surface layers is that they include quantities of charged ions<br />

which have been localised there. These are immobile under normal applied voltages moving only under the action<br />

of high fields such as produced by the reversal of the remanent polarisation. Those ions not only will occupy<br />

trapping levels, eliminating the need for easily ionised trapped electrons and thus reducing the intrinsic<br />

conductivity but also form centres for coulomb scattering of conduction electrons which should contribute<br />

markedly <strong>to</strong> the resistivity.<br />

Efficiency<br />

Some insight in<strong>to</strong> the possible maximum efficiency of the process can be obtained by considering carriers<br />

generated by band gap light. with potential energy<br />

A - 328

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