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Cortex-A8 Technical Reference Manual - ARM Information Center

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• the data after pass 1 of XADDRBAR using a data seed of 0.<br />

YADDRBAR<br />

Design for Test<br />

Figure 11-22 XADDRBAR array accessing and data<br />

The YADDRBAR pattern is similar to the XADDRBAR pattern with the exception of<br />

incrementing and decrementing the array column-fast.<br />

In a 4 4 array, Figure 11-23 shows:<br />

• the order of array accesses during YADDRBAR execution<br />

• the data after pass 1 of YADDRBAR using a data seed of 0.<br />

WRITEBANG<br />

Addressing<br />

direction<br />

Row<br />

3<br />

2<br />

1<br />

0<br />

g o<br />

e m<br />

c k<br />

a i<br />

j b<br />

l d<br />

n f<br />

p h<br />

Col 0 1 2 3<br />

Order of XADDRBAR<br />

array accesses in<br />

passes 1 and 2<br />

Row<br />

3<br />

2<br />

1<br />

0<br />

Addressing<br />

direction<br />

h f<br />

p n<br />

i k<br />

a c<br />

Figure 11-23 YADDRBAR array accessing and data<br />

WRITEBANG is a row-fast bitline stress pattern. It operates on a bitline pair, that is, a column.<br />

It tries to create slow reads from target data cells in the column that can cause hard faults in<br />

self-timed and high-speed RAMs. It writes the bitline multiple times to the opposite data state<br />

of the target read, trying to create an imbalance in the bitline pair that the cell must correct. The<br />

pattern reveals insufficient bitline precharge or equalization. The target cell has opposite data<br />

from all other cells on the bitline pair. This is a worst-case bitline condition for a cell to drive<br />

because any leakage from other cells in the column oppose the targeted read. In the following<br />

description, wsac indicates a write to row 0, a sacrificial (untested) row used during test.<br />

WRITEBANG performs the following sequence:<br />

1. Wscan data to entire array.<br />

2. W_, R_, wsac, wsac, wsac, wsac, wsac, R_, W, incr.<br />

3. Wscan databar.<br />

4. W, R, wsac_, wsac_, wsac_, wsac_, wsac_, R, W_, incr.<br />

Figure 11-24 on page 11-26 shows the state of row 1, column 2 in a 4 4 array during pass 2.<br />

<strong>ARM</strong> DDI 0344K Copyright © 2006-2010 <strong>ARM</strong> Limited. All rights reserved. 11-25<br />

ID060510 Non-Confidential<br />

d b<br />

l j<br />

m<br />

o<br />

e g<br />

Col 0 1 2 3<br />

Order of YADDRBAR<br />

array accesses in<br />

passes 1 and 2<br />

Row<br />

3<br />

2<br />

1<br />

0<br />

i a<br />

k c<br />

m e<br />

o g<br />

h p<br />

f n<br />

d l<br />

b j<br />

Col 0 1 2 3<br />

Order of XADDRBAR<br />

array accesses in<br />

passes 3 and 4<br />

Row<br />

3<br />

2<br />

1<br />

0<br />

j l<br />

b d<br />

g e<br />

o m<br />

n p<br />

f h<br />

c a<br />

k i<br />

Col 0 1 2 3<br />

Order of YADDRBAR<br />

array accesses in<br />

passes 3 and 4<br />

Row<br />

3<br />

2<br />

1<br />

0<br />

0 0<br />

0 0<br />

0 0<br />

0 0<br />

1 1<br />

1 1<br />

1 1<br />

1 1<br />

Col 0 1 2 3<br />

XADDRBAR array<br />

data after pass 1 with<br />

data seed = 0<br />

Row<br />

3<br />

2<br />

1<br />

0<br />

1 1<br />

1 1<br />

0 0<br />

0 0<br />

1 1<br />

1 1<br />

0 0<br />

0 0<br />

Col 0 1 2 3<br />

YADDRBAR array<br />

data after pass 1 with<br />

data seed = 0

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