Bulletin 2010/35 - European Patent Office
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(H01L) I.1(2)<br />

AL BA MK RS<br />

(86) JP 2008/071452 26.11.2008<br />

(87) WO 2009/078254 2009/26 25.06.2009<br />

(30) 17.12.2007 JP 2007324684<br />

(54) • SUBSTRAT UND VERFAHREN ZU SEINER<br />

HERSTELLUNG<br />

• SUBSTRATE AND METHOD FOR MANU-<br />

FACTURING THE SAME<br />

• SUBSTRAT ET SON PROCÉDÉ DE FABRI-<br />

CATION<br />

(71) Nippon Mining & Metals Co., Ltd., 10-1,<br />

Toranomon 2-chome Minato-ku, Tokyo 105-<br />

0001, JP<br />

(72) ITO, Junichi, Kitaibaraki-shi Ibaraki 319-<br />

15<strong>35</strong>, JP<br />

YABE, Atsushi, Kitaibaraki-shi Ibaraki 319-<br />

15<strong>35</strong>, JP<br />

SEKIGUCHI, Junnosuke, Kitaibaraki-shi<br />

Ibaraki 319-15<strong>35</strong>, JP<br />

IMORI, Toru, Kitaibaraki-shi Ibaraki 319-<br />

15<strong>35</strong>, JP<br />

(74) Schwabe - Sandmair - Marx, <strong>Patent</strong>anwälte<br />

Stuntzstraße 16, 81677 München, DE<br />

H01L 21/331 → (51) H01L 21/8249<br />

H01L 21/52 → (51) H01L 25/065<br />

(51) H01L 21/60 (11) 2 224 473 A1<br />

(25) Ja (26) En<br />

(21) 08858733.2 (22) 13.11.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(86) JP 2008/070691 13.11.2008<br />

(87) WO 2009/075160 2009/25 18.06.2009<br />

(30) 10.12.2007 JP 2007318751<br />

(54) • VERFAHREN UND VORRICHTUNG ZUR<br />

ANBRINGUNG EINER ELEKTRISCHEN<br />

KOMPONENTE<br />

• METHOD AND APPARATUS FOR MOUNT-<br />

ING ELECTRIC COMPONENT<br />

• PROCÉDÉ ET APPAREIL DE MONTAGE<br />

D'UN COMPOSANT ÉLECTRIQUE<br />

(71) Sony Chemical & Information Device Corporation,<br />

Gate City Osaki East Tower 8F 11-2,<br />

Osaki 1-chome Shinagawa-ku, Tokyo 141-<br />

0032, JP<br />

(72) HAMAZAKI, Kazunori, Kanuma-shi Tochigi<br />

322-8502, JP<br />

(74) Polypatent, An den Gärten 7, 51491 Overath,<br />

DE<br />

(51) H01L 21/66 (11) 2 224 474 A2<br />

(25) En (26) En<br />

(21) 10154913.7 (22) 26.02.<strong>2010</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

AL BA RS<br />

(30) 26.02.2009 GB 0903286<br />

(54) • Teststruktur für integrierte Schaltungen<br />

• Test structure for integrated circuits<br />

• Structure de test pour circuits intégrés<br />

(71) Melexis Tessenderlo NV, Transportstraat 1,<br />

3980 Tessenderlo, BE<br />

(72) De Winter, Rudi, 3980 Tessenderio, BE<br />

Betts, William, Robert, 3980 Tessenderio, BE<br />

(74) Wilson Gunn, Charles House 148/9 Great<br />

Charles Street, Birmingham B3 3HT, GB<br />

(51) H01L 21/677 (11) 2 224 475 A1<br />

C23C 16/44 H01L 21/205<br />

H01L 21/31<br />

(25) Ja (26) En<br />

(21) 08861860.8 (22) 12.12.2008<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(86) JP 2008/072649 12.12.2008<br />

(87) WO 2009/078<strong>35</strong>4 2009/26 25.06.2009<br />

(30) 18.12.2007 JP 2007326168<br />

(54) • VERARBEITUNGSVERFAHREN UND<br />

HALBLEITERHERSTELLUNGSVERFAHREN<br />

• PROCESSING METHOD AND SEMICON-<br />

DUCTOR DEVICE MANUFACTURING<br />

METHOD<br />

• PROCÉDÉ DE TRAITEMENT ET PROCÉDÉ<br />

DE FABRICATION D'UN DISPOSITIF À<br />

SEMI-CONDUCTEUR<br />

(71) Sumitomo Electric Industries, Ltd., 5-33<br />

Kitahama 4-chome, Chuo-ku Osaka-shi<br />

Osaka 541-0041, JP<br />

(72) SHIBATA, Kaoru, Itami-shi Hyogo 664-0016,<br />

JP<br />

NAKANISHI, Fumitake, Itami-shi Hyogo 664-<br />

0016, JP<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser<br />

Anwaltssozietät, Leopoldstrasse 4,<br />

80802 München, DE<br />

(51) H01L 21/762 (11) 2 224 476 A1<br />

(25) Fr (26) Fr<br />

(21) 10154264.5 (22) 22.02.<strong>2010</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

AL BA RS<br />

(30) 27.02.2009 FR 0951247<br />

(54) • Herstellungsverfahren eines Hybridsubstrats<br />

durch teilweise Rekristallisierung einer<br />

Mischschicht<br />

• Method for manufacturing a hybrid substrate<br />

by partial re-crystallisation of a<br />

mixed layer<br />

• Procédé d'élaboration d'un substrat<br />

hybride par recristallisation partielle d'une<br />

couche mixte<br />

(71) Commissariat à l'Énergie Atomique et aux<br />

Énergies Alternatives, Bâtiment "Le Ponant D"<br />

25, rue Leblanc, 75015 Paris, FR<br />

(72) Fournel, Franck, 38190, VILLARD-BONNOT,<br />

FR<br />

Signamarcheix, Thomas, 38660, LA TER-<br />

RASSE, FR<br />

Clavelier, Laurent, 38120, SAINT EGREVE,<br />

FR<br />

Deguet, Chrystel, 38330, SAINT ISMIER, FR<br />

(74) Quantin, Bruno Marie Henri, Santarelli 14<br />

Avenue de la Grande Armée B.P. 237, 75822<br />

Paris Cedex 17, FR<br />

H01L 21/768 → (51) H01L 45/00<br />

H01L 21/8222 → (51) H01L 21/8249<br />

(51) H01L 21/8246 (11) 2 224 477 A1<br />

G11C 11/15 H01L 27/105<br />

H01L 43/08<br />

(25) Ja (26) En<br />

(21) 08862686.6 (22) 28.08.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(86) JP 2008/065410 28.08.2008<br />

(87) WO 2009/078202 2009/26 25.06.2009<br />

(30) 19.12.2007 JP 2007327175<br />

(54) • MAGNETSPEICHERELEMENT, VERFAHREN<br />

ZUR ANSTEUERUNG DES MAGNETSPEI-<br />

CHERELEMENTS UND NICHTFLÜCHTIGE<br />

SPEICHERVORRICHTUNG<br />

325<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>35</strong>/<strong>2010</strong>) 01.09.<strong>2010</strong><br />

• MAGNETIC MEMORY ELEMENT, METHOD<br />

FOR DRIVING THE MAGNETIC MEMORY<br />

ELEMENT, AND NONVOLATILE STORAGE<br />

DEVICE<br />

• ÉLÉMENT DE MÉMOIRE MAGNÉTIQUE,<br />

PROCÉDÉ POUR PILOTER L'ÉLÉMENT DE<br />

MÉMOIRE MAGNÉTIQUE, ET DISPOSITIF<br />

DE STOCKAGE NON VOLATIL<br />

(71) FUJI ELECTRIC HOLDINGS CO., LTD., 1-1<br />

Tanabeshinden Kawasaki-ku, Kawasaki<br />

Kanagawa 210-0858, JP<br />

(72) OGIMOTO, Yasushi, Kawasaki-shi 210-0856,<br />

JP<br />

KAWAKAMI, Haruo, Kawasaki-shi 210-0856,<br />

JP<br />

(74) Appelt, Christian W., Forrester & Boehmert<br />

Pettenkoferstrasse 20-22, 80336 München,<br />

DE<br />

H01L 21/8248 → (51) H01L 21/8249<br />

(51) H01L 21/8249 (11) 2 224 478 A1<br />

H01L 21/331 H01L 21/8222<br />

H01L 21/8248 H01L 27/06<br />

H01L 29/73<br />

(25) Ja (26) En<br />

(21) 08865744.0 (22) 19.12.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(86) JP 2008/073207 19.12.2008<br />

(87) WO 2009/081867 2009/27 02.07.2009<br />

(30) 20.12.2007 JP 2007328783<br />

31.03.2008 JP 2008092288<br />

29.07.2008 JP 2008195016<br />

(54) • HALBLEITERBAUELEMENT UND VERFAH-<br />

REN ZUR HERSTELLUNG EINES HALB-<br />

LEITERBAUELEMENTS<br />

• SEMICONDUCTOR DEVICE AND METHOD<br />

FOR MANUFACTURING SEMICONDUCTOR<br />

DEVICEDISPOSITIF À SEMI-CONDUC-<br />

TEURRS ET PROCÉDÉ DE FABRICATION<br />

D'UN DISPOSITIF À SEMI-CONDUCTEURS<br />

• DISPOSITIF À SEMI-CONDUCTEURS ET<br />

PROCÉDÉ DE FABRICATION D'UN DISPO-<br />

SITIF À SEMI-CONDUCTEURS<br />

(71) Asahi Kasei EMD Corporation, 1-105 Kanda<br />

Jinbocho, Chiyoda-ku Tokyo 101-8101, JP<br />

(72) KORICIC, Marko, 10000 Zagreb, HR<br />

SULIGOJ, Tomislav, 10000 Zagreb, HR<br />

MOCHIZUKI, Hidenori, Tokyo 101-8101, JP<br />

MORITA, Soichi, Tokyo 101-8101, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastrasse 4, 81925 München, DE<br />

(51) H01L 23/12 (11) 2 224 479 A2<br />

H01L 23/36 H01S 5/022<br />

(25) En (26) En<br />

(21) 10005899.9 (22) 24.05.2006<br />

(84) DE<br />

(30) 06.06.2005 JP 2005166162<br />

(54) • Metall-Keramik-Verbundsubstrat und Verfahren<br />

zu seiner Herstellung<br />

• Metal-ceramic composite substrate and<br />

method of its manufacture<br />

• substrat composite métal-céramique et son<br />

procédé de fabrication<br />

(71) DOWA Electronics Materials Co., Ltd., 14-1,<br />

Sotokanda 4-chome, Chiyoda-ku Tokyo 101-<br />

0021, JP<br />

(72) Oshika, Yoshikazu, Tokyo 101-0021, JP<br />

(74) Serjeants, 25 The Crescent King Street,<br />

Leicester, LE1 6RX, GB<br />

(62) 06756534.1 / 1 909 321<br />

H01L 23/36 → (51) H01L 23/12

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