Bulletin 2010/35 - European Patent Office
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(H01L) II.1(1)<br />

(73) THE JAPAN STEEL WORKS, LTD., 1-2,<br />

Yurakucho-1-chome, Chiyoda-ku, Tokyo<br />

100-0006, JP<br />

(72) SHIDA, Junichi, c/o The Japan Steel Works,<br />

Ltd., Yokohama-shi, Kanagawa 236-0004, JP<br />

CHUNG, Suk-hwan, c/o The Japan Steel<br />

Works, Ltd., Yokohama-shi, Kanagawa 236-<br />

0004, JP<br />

URYU, Shuichi, c/o The Japan Steel Works,<br />

Ltd., Yokohama-shi, Kanagawa 236-0004, JP<br />

(74) Whalley, Kevin, Marks & Clerk LLP, 90 Long<br />

Acre London WC2E 9RA, GB<br />

H01L 21/311 → (51) H01L 21/762<br />

H01L 21/312 → (51) C09C 1/00<br />

H01L 21/316 → (51) C09C 1/00<br />

(51) H01L 21/762 (11) 1 182 699 B1<br />

H01L 21/764 H01L 21/311<br />

H01L 29/06 H01L 27/08<br />

(25) De (26) De<br />

(21) 01117972.8 (22) 24.07.2001<br />

(84) DE<br />

(43) 27.02.2002<br />

(30) 22.08.2000 DE 10041084<br />

(54) • Verfahren zur Bildung eines dicken<br />

dielektrischen Gebietes in einem Halbleitersubstrat<br />

• Process for forming a thick dielectric<br />

region in a semiconductor substrate<br />

• Procédé de formation d'une région épaisse<br />

de diélectrique dans un substrat semiconducteur<br />

(73) Infineon Technologies AG, Am Campeon 1-<br />

12, 85579 Neubiberg, DE<br />

(72) Lachner, Rudolf, Dr., 85051 Ingolstadt, DE<br />

(74) Viering, Jentschura & Partner, Postfach 22<br />

14 43, 80504 München, DE<br />

H01L 21/764 → (51) H01L 21/762<br />

(51) H01L 23/051 (11) 1 952 439 B1<br />

H01L 25/16 H01L 23/48<br />

(25) De (26) De<br />

(21) 06818530.5 (22) 14.11.2006<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 06.08.2008<br />

(86) EP 2006/010916 14.11.2006<br />

(87) WO 2007/054368 2007/20 18.05.2007<br />

(30) 14.11.2005 DE 102005054543<br />

(54) • HALBLEITERVORRICHTUNG MIT EINEM<br />

EINE ANSTEUEREINHEIT ENTHALTENDEN<br />

GEHÄUSE<br />

• SEMICONDUCTOR DEVICE COMPRISING<br />

A HOUSING CONTAINING A TRIGGERING<br />

UNIT<br />

• DISPOSITIF A SEMI-CONDUCTEUR<br />

POURVU D'UN BOITIER CONTENANT UNE<br />

UNITE DE COMMANDE<br />

(73) Forschungsgemeinschaft für Leistungselektronik<br />

und Elektrische Antriebe e. V., Jägerstrasse<br />

17-19, 52066 Aachen, DE<br />

De Doncker, Rik W., Lei 21, 3000 Leuven, BE<br />

(72) Koellensperger, Peter, 52074 Aachen, DE<br />

De Doncker, Rik W., 3000 Leuven, BE<br />

(74) Jostarndt, Hans-Dieter, et al, Jostarndt<br />

<strong>Patent</strong>anwalts-AG Brüsseler Ring 51, 52074<br />

Aachen, DE<br />

H01L 23/31 → (51) H01L 21/02<br />

H01L 23/31 → (51) H05K 1/14<br />

H01L 23/40 → (51) H05K 7/20<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

H01L 23/48 → (51) H01L 23/051<br />

H01L 23/522 → (51) H01L 21/02<br />

H01L 23/60 → (51) H01L 21/02<br />

H01L 25/065 → (51) H05K 1/14<br />

H01L 25/16 → (51) H01L 23/051<br />

H01L 27/01 → (51) H01L 21/02<br />

(51) H01L 27/148 (11) 1 137 071 B1<br />

H04N 3/15<br />

(25) En (26) En<br />

(21) 01200931.2 (22) 12.03.2001<br />

(84) DE FR GB NL<br />

(43) 26.09.2001<br />

(30) 22.03.2000 US 533051<br />

(54) • Schnellentladungsstruktur für Vollbildsensor<br />

mit lateraler Overflow-Drain Antiblooming-Struktur<br />

• Fast-dump structure for full-frame image<br />

sensors with lateral overflow drain antiblooming<br />

structures<br />

• Structure de décharge rapide pour un<br />

capteur plein cadre avec structures antiéblouissement<br />

de drain laterale de dépassement<br />

(73) Eastman Kodak Company, 343 State Street,<br />

Rochester NY 14650-2201, US<br />

(72) Stevens, Eric Gordon, c/o Eastman Kodak<br />

company, Rochester, New York 14650-2201,<br />

US<br />

Desjardin, William F. c/o Eastman Kodak<br />

company, Rochester, New York 14650-2201,<br />

US<br />

(74) Weber, Etienne Nicolas, et al, Kodak Etablissement<br />

de Chalon Campus Industriel -<br />

Département Brevets Route de Demigny - Z.I.<br />

Nord - B.P. 21, 71102 Chalon sur Saône<br />

Cedex, FR<br />

H01L 27/32 → (51) H01L 51/50<br />

(51) H01L 31/0236 (11) 1 794 804 B1<br />

H01L 31/18<br />

(25) En (26) En<br />

(21) 05856921.1 (22) 23.09.2005<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 13.06.2007<br />

(86) US 2005/034180 23.09.2005<br />

(87) WO 2006/086014 2006/33 17.08.2006<br />

(30) 24.09.2004 US 950230<br />

24.09.2004 US 950248<br />

(54) • VERFAHREN ZUR HERSTELLUNG VON<br />

DETEKTOREN AUF SILIZIUMBASIS MIT<br />

LASERMIKROSTRUKTURIERTEN OBER-<br />

FLÄCHENSCHICHTEN MIT ELEKTRONEN-<br />

DONATOREN<br />

• METHOD FOR MANUFACTURING OF SILI-<br />

CON-BASED DETECTORS HAVING LASER-<br />

MICROSTRUCTURED SURFACE LAYERS<br />

HAVING ELECTRON-DONATING CONSTI-<br />

TUENTS<br />

• FABRICATION DE DETECTEURS A BASE<br />

DE SILICIUM PRESENTANT DES COU-<br />

CHES DE SURFACE AVEC DES DONNEURS<br />

D'ELECTRONS MICRO-STRUCTUREES<br />

PAR LASER<br />

(73) The President and Fellows of Harvard<br />

College, 17 Quincy Street, Cambridge, MA<br />

02114, US<br />

(72) MAZUR, Eric, Concord, MA 01742, US<br />

CAREY, James, Edward, III, Brighton, MA<br />

021<strong>35</strong>, US<br />

(74) Strehl Schübel-Hopf & Partner, Maximilianstrasse<br />

54, 80538 München, DE<br />

649<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>35</strong>/<strong>2010</strong>) 01.09.<strong>2010</strong><br />

(60) 09015646.4 / 2 164 107<br />

H01L 31/04 → (51) H01M 14/00<br />

H01L 31/18 → (51) H01L 31/0236<br />

H01L 33/00 → (51) H05B 33/04<br />

H01L 33/00 → (51) H05K 7/20<br />

(51) H01L 41/04 (11) 2 020 044 B1<br />

(25) De (26) De<br />

(21) 07718454.7 (22) 22.05.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(43) 04.02.2009<br />

(86) AT 2007/000243 22.05.2007<br />

(87) WO 2007/134<strong>35</strong>3 2007/48 29.11.2007<br />

(30) 24.05.2006 AT 9012006<br />

(54) • VORRICHTUNG ZUM ANSTEUERN<br />

WENIGSTENS EINES PIEZOELEKTRI-<br />

SCHEN STELLTRIEBES EINER EIN-<br />

SPRITZDÜSE FÜR EINE<br />

BRENNKRAFTMASCHINE<br />

• DEVICE FOR ACTUATING AT LEAST ONE<br />

PIEZO-ELECTRIC ACTUATING DRIVE OF<br />

AN INJECTION NOZZLE FOR AN INTERNAL<br />

COMBUSTION ENGINE<br />

• DISPOSITIF DE COMMANDE D'AU MOINS<br />

UN MÉCANISME DE COMMANDE PIÉZOÉ-<br />

LECTRIQUE D'UNE BUSE D'INJECTION<br />

POUR UN MOTEUR À COMBUSTION<br />

INTERNE<br />

(73) Steinbauer Electronics Development GmbH,<br />

Neu Gablonz 5, 4470 Enns, AT<br />

(72) STEINBAUER, Herbert, 4203 Altenberg, AT<br />

EDER, Hubert, 4062 Kirchberg/Thening, AT<br />

(74) Hübscher, Helmut, et al, Spittelwiese 7, 4020<br />

Linz, AT<br />

H01L 51/05 → (51) C08G 61/12<br />

(51) H01L 51/30 (11) 1 702 372 B1<br />

C08G 61/12<br />

(25) En (26) En<br />

(21) 04807027.0 (22) 08.12.2004<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU MC NL PL PT RO SE<br />

SI SK TR<br />

(43) 20.09.2006<br />

(86) JP 2004/018668 08.12.2004<br />

(87) WO 2005/057677 2005/25 23.06.2005<br />

(30) 09.12.2003 JP 2003410097<br />

(54) • POLYMER FÜR EINE ANODENPUFFER-<br />

SCHICHT, BESCHICHTUNGSLÖSUNG FÜR<br />

EINE ANODENPUFFERSCHICHT UND<br />

ORGANISCHES LICHTEMISSIONSBAU-<br />

ELEMENT<br />

• POLYMER FOR ANODE BUFFER LAYER,<br />

COATING SOLUTION FOR ANODE BUFFER<br />

LAYER, AND ORGANIC LIGHT EMITTING<br />

DEVICE<br />

• POLYMERE POUR COUCHE TAMPON<br />

D'ANODE, SOLUTION DE REVETEMENT<br />

POUR CETTE COUCHE, ET DISPOSITIF<br />

ELECTROLUMINESCENT<br />

(73) Showa Denko K.K., 13-9, Shiba Daimon, 1chome,<br />

Minato-ku, Tokyo 105-8518, JP<br />

(72) KOYAMA, Tamami, Chiba-shi, Chiba 267-<br />

0056, JP<br />

KONDO, Kunio, Chiba-shi, Chiba 267-0056,<br />

JP<br />

(74) Strehl Schübel-Hopf & Partner, Maximilianstrasse<br />

54, 80538 München, DE<br />

(51) H01L 51/50 (11) 1 684 551 B1<br />

C09K 11/06 H01L 27/32<br />

H05B 33/14 H05B 33/22

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