Bulletin 2010/35 - European Patent Office
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(H01H) II.1(1)<br />

(73) BTICINO S.P.A., Via Messina, 38, 20154<br />

Milano, IT<br />

(72) Re, Marcello, 21040 Venegono Superiore<br />

(Varese), IT<br />

(74) Carangelo, Pierluigi, et al, Jacobacci &<br />

Partners S.p.A. Via delle Quattro Fontane 15,<br />

00184 Roma, IT<br />

H01H 73/52 → (51) H01H 71/00<br />

H01J 9/385 → (51) H05B 6/00<br />

H01J 17/16 → (51) G09F 9/33<br />

H01J 23/10 → (51) H05B 6/00<br />

(51) H01J 23/34 (11) 1 814 134 B1<br />

(25) En (26) En<br />

(21) 07001734.8 (22) 26.01.2007<br />

(84) DE GB<br />

(43) 01.08.2007<br />

(30) 31.01.2006 JP 2006022851<br />

(54) • Stromversorgungsgerät und Hochfrequenzschaltkreissystem<br />

• Power supply apparatus and high frequency<br />

circuit system<br />

• Appareil d'alimentation électrique et système<br />

de circuit haute fréquence<br />

(73) NETCOMSEC Co., Ltd, 1-10 Nisshin-cho<br />

Fuchu, Tokyo 183-8501, JP<br />

(72) Kobayashi, Junichi, Sagamihara-shi Kanagawa<br />

229-1134, JP<br />

Fujiwara, Eiji, Sagamihara-shi Kanagawa<br />

229-1134, JP<br />

(74) Glawe, Delfs, Moll, <strong>Patent</strong>- und Rechtsanwälte<br />

Postfach 26 01 62, 80058 München,<br />

DE<br />

H01J 25/50 → (51) H05B 6/00<br />

H01J 29/86 → (51) G09F 9/33<br />

(51) H01J 37/32 (11) 1 265 267 B1<br />

G01R 19/00<br />

(25) En (26) En<br />

(21) 02011999.6 (22) 31.05.2002<br />

(84) DE GB IE<br />

(43) 11.12.2002<br />

(30) 05.06.2001 US 874439<br />

(54) • Radiofrequenzenergie-Tastkopf mit thermisch<br />

leitender Hülse<br />

• RF power probe head with a thermally<br />

conductive bushing<br />

• Tête de sonde d'énergie radiofréquence<br />

comportant une douille thermiquement<br />

conductrice<br />

(73) MKS Instruments, Inc., 2 Tech Drive, Suite<br />

201, Andover, MA 01810, US<br />

(72) Coumou, David J., Webster, New York<br />

14580, US<br />

(74) Neumann, Ernst Dieter, et al, Neumann<br />

Müller Oberwalleney & Partner <strong>Patent</strong>anwälte<br />

Overstolzenstrasse 2a, 50677 Köln, DE<br />

(51) H01J 37/32 (11) 1 599 891 B1<br />

(25) En (26) En<br />

(21) 04710651.3 (22) 12.02.2004<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IT LI LU MC NL PT RO SE SI SK<br />

TR<br />

(43) 30.11.2005<br />

(86) US 2004/004134 12.02.2004<br />

(87) WO 2004/077505 2004/37 10.09.2004<br />

(30) 27.02.2003 US 376498<br />

(54) • KOMPENSATION DER VARIATION VON<br />

KRITISCHEN DIMENSIONEN AUF EINER<br />

WAVEROBERFLÄCHE MIT HILFE VON<br />

LOKALER TEMPERATURKONTROLLE<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

• CRITICAL DIMENSION VARIATION COM-<br />

PENSATION ACROSS A WAFER BY MEANS<br />

OF LOCAL WAFER TEMPERATURE CON-<br />

TROL<br />

• COMPENSATION DE VARIATION DE LA<br />

DIMENSION CRITIQUE D'UNE TRANCHE<br />

AU MOYEN D'UN REGULATEUR LOCAL DE<br />

TEMPERATURE DE TRANCHE<br />

(73) LAM RESEARCH CORPORATION, 4650<br />

Cushing Parkway MS CA1, Fremont, CA<br />

94538, US<br />

(72) STEGER, Robert, J., Los Altos, CA 94024,<br />

US<br />

(74) Falk, Urs, <strong>Patent</strong>anwaltsbüro Dr. Urs Falk<br />

Eichholzweg 9A, 6312 Steinhausen, CH<br />

(51) H01J 37/32 (11) 2 095 392 B1<br />

(25) De (26) De<br />

(21) 07846777.6 (22) 23.11.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(43) 02.09.2009<br />

(86) EP 2007/010176 23.11.2007<br />

(87) WO 2008/061775 2008/22 29.05.2008<br />

(30) 23.11.2006 EP 06024306<br />

24.11.2006 US 867159 P<br />

(54) • VERFAHREN ZUM BETREIBEN EINES<br />

PLASMAPROZESSES UND PLASMASYS-<br />

TEM<br />

• METHOD FOR OPERATING A PLASMA<br />

PROCESS AND PLASMA SYSTEM<br />

• PROCÉDÉ DE MISE EN OEUVRE D'UN<br />

TRAITEMENT PAR PLASMA ET SYSTÈME<br />

À PLASMA<br />

(73) Hüttinger Elektronik GmbH & Co. KG,<br />

Bötzinger Strasse 80, 79111 Freiburg, DE<br />

(72) NITSCHKE, Moritz, 79114 Freiburg, DE<br />

(74) Kohler Schmid Möbus, <strong>Patent</strong>anwälte<br />

Ruppmannstraße 27, 70565 Stuttgart, DE<br />

H01J 49/04 → (51) H01J 49/16<br />

(51) H01J 49/16 (11) 1 093 151 B1<br />

H01J 49/04 G01N 27/68<br />

(25) En (26) En<br />

(21) 001<strong>2010</strong>0.3 (22) 15.09.2000<br />

(84) DE FR GB<br />

(43) 18.04.2001<br />

(30) 20.09.1999 JP 26604499<br />

10.08.2000 JP 2000247937<br />

(54) • Ionenquelle, Massenspektrometer, Massenspektrometrie<br />

und Überwachungssystem<br />

• Ion source, mass spectrometer, mass<br />

spectrometry, and monitoring system<br />

• Source d'ions, spectromètre de masse,<br />

spectrométrie de masse et système de<br />

contrôle<br />

(73) Hitachi, Ltd., 6 Kanda Surugadai 4-chome,<br />

Chiyoda-ku, Tokyo 100-8010, JP<br />

(72) Sakairi, Minoru, Tokorozawa-shi, Saitama<br />

<strong>35</strong>9-0003, JP<br />

Hashimoto, Yuichiro, Kokubunji-shi, Tokyo<br />

185-0013, JP<br />

Yamada, Masuyoshi, Ichikawa-shi, Chiba<br />

272-0824, JP<br />

Suga, Masao, Hachioji-shi, Tokyo 192-0043,<br />

JP<br />

Kojima, Kyoko, Hino-shi, Tokyo 191-0065,<br />

JP<br />

(74) Strehl Schübel-Hopf & Partner, Maximilianstrasse<br />

54, 80538 München, DE<br />

(51) H01J 49/16 (11) 1 181 707 B1<br />

(25) En (26) En<br />

(21) 00939394.3 (22) 26.05.2000<br />

(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />

LU MC NL PT SE<br />

648<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>35</strong>/<strong>2010</strong>) 01.09.<strong>2010</strong><br />

(43) 27.02.2002<br />

(86) US 2000/014790 26.05.2000<br />

(87) WO 2000/077822 2000/51 21.12.2000<br />

(30) 11.06.1999 US 138928 P<br />

(54) • MALDI IONENQUELLE MIT GASIMPULS,<br />

VORRICHTUNG UND VERFAHREN ZUR<br />

ERMITTLUNG DES MOLEKULARGEWICH-<br />

TES LABILEN MOLEKÜLE<br />

• MALDI ION SOURCE WITH A PULSE OF<br />

GAS, APPARATUS AND METHOD FOR<br />

DETERMINING MOLECULAR WEIGHT OF<br />

LABILE MOLECULES<br />

• SOURCE D'IONS MALDI AVEC IMPULSION<br />

DE GAZ, APPAREIL ET PROCEDE PER-<br />

METTANT DE DETERMINER LE POIDS<br />

MOLECULAIRE DE MOLECULES LABILES<br />

(73) Applied Biosystems, LLC, 5791 Van Allen<br />

Way, Carlsbad, CA 92008, US<br />

(72) VERENTCHIKOV, Anatoli, N., Boston, MA<br />

02116, US<br />

VESTAL, Marvin, L., Framingham, MA<br />

01701, US<br />

SMIRNOV, Igor, P., Brookline, MA 02146,<br />

US<br />

(74) Fennell, Gareth Charles, D Young & Co LLP<br />

120 Holborn, London EC1N 2DY, GB<br />

(51) H01L 21/02 (11) 1 984 939 B1<br />

H01L 23/60 H01L 27/01<br />

H01L 23/31 H01L 23/522<br />

(25) En (26) En<br />

(21) 07705804.8 (22) 06.02.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 29.10.2008<br />

(86) IB 2007/050393 06.02.2007<br />

(87) WO 2007/091214 2007/33 16.08.2007<br />

(30) 10.02.2006 EP 06101561<br />

(54) • HALBLEITERBAUELEMENT UND VERFAH-<br />

REN ZU SEINER HERSTELLUNG<br />

• SEMICONDUCTOR DEVICE AND METHOD<br />

OF MANUFACTURING THEREOF<br />

• DISPOSITIF SEMI-CONDUCTEUR ET PRO-<br />

CEDE POUR LE FABRIQUER<br />

(73) NXP B.V., High Tech Campus 60, 5656 AG<br />

Eindhoven, NL<br />

(72) STACHE, Joachim, NL-5656 AG Eindhoven,<br />

NL<br />

HOFFMANN, Rainer, NL-5656 AG Eindhoven,<br />

NL<br />

BURNUS, Michael, NL-5656 AG Eindhoven,<br />

NL<br />

(74) Krott, Michel, et al, NXP B.V. Intellectual<br />

Property & Licensing Department High Tech<br />

Campus 32, 5656 AE Eindhoven, NL<br />

H01L 21/02 → (51) C04B <strong>35</strong>/573<br />

H01L 21/20 → (51) H01L 21/268<br />

(51) H01L 21/268 (11) 1 892 751 B1<br />

H01L 21/20<br />

(25) Ja (26) En<br />

(21) 06756907.9 (22) 02.06.2006<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 27.02.2008<br />

(86) JP 2006/311069 02.06.2006<br />

(87) WO 2006/134785 2006/51 21.12.2006<br />

(30) 13.06.2005 JP 2005172329<br />

(54) • LASERBESTRAHLUNGSVERFAHREN UND<br />

VORRICHTUNG DAFÜR<br />

• LASER IRRADIATION METHOD AND<br />

DEVICE THEREOF<br />

• PROCEDE ET DISPOSITIF D' IRRADIATION<br />

LASER

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