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RM0090: Reference manual - STMicroelectronics

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Flexible static memory controller (FSMC) <strong>RM0090</strong><br />

Table 213. Programmable NAND/PC Card access parameters<br />

Parameter Function Access mode Unit Min. Max.<br />

Memory setup<br />

time<br />

Memory wait<br />

Memory hold<br />

Memory<br />

databus high-Z<br />

32.6.1 External memory interface signals<br />

The following tables list the signals that are typically used to interface NAND Flash and PC<br />

Card.<br />

Note: Prefix “N”. specifies the associated signal as active low.<br />

8-bit NAND Flash<br />

Number of clock cycles (HCLK)<br />

to set up the address before the<br />

command assertion<br />

t<br />

Table 214. 8-bit NAND Flash<br />

There is no theoretical capacity limitation as the FSMC can manage as many address<br />

cycles as needed.<br />

1351/1416 Doc ID 018909 Rev 3<br />

Read/Write<br />

Minimum duration (HCLK clock<br />

cycles) of the command assertion Read/Write<br />

Number of clock cycles (HCLK)<br />

to hold the address (and the data<br />

in case of a write access) after<br />

the command de-assertion<br />

Number of clock cycles (HCLK)<br />

during which the databus is kept<br />

in high-Z state after the start of a<br />

write access<br />

Read/Write<br />

Write<br />

FSMC signal name I/O Function<br />

AHB clock cycle<br />

(HCLK)<br />

AHB clock cycle<br />

(HCLK)<br />

AHB clock cycle<br />

(HCLK)<br />

AHB clock cycle<br />

(HCLK)<br />

A[17] O NAND Flash address latch enable (ALE) signal<br />

A[16] O NAND Flash command latch enable (CLE) signal<br />

D[7:0] I/O 8-bit multiplexed, bidirectional address/data bus<br />

NCE[x] O Chip select, x = 2, 3<br />

NOE(= NRE) O Output enable (memory signal name: read enable, NRE)<br />

NWE O Write enable<br />

NWAIT/INT[3:2] I NAND Flash ready/busy input signal to the FSMC<br />

1 256<br />

2 256<br />

1 255<br />

0 255

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