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Regional Basic Professional Training Course in Korea

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❙ 87 ❙<br />

2. Radiation Protection<br />

a positive and negative electrode attached to each side. Under ord<strong>in</strong>ary circumstances, all<br />

the electrons <strong>in</strong> the crystal structure are <strong>in</strong> the lowest allowable energy states. However,<br />

when energy is deposited <strong>in</strong> the crystal, the electrons are excited to energy states near the<br />

valence band, as <strong>in</strong> the case of the sc<strong>in</strong>tillator, but <strong>in</strong> a semiconductor the electrons get<br />

trapped <strong>in</strong> this higher energy state. As usual, all the miss<strong>in</strong>g electron vacancies or holes<br />

propagate to the valence band.<br />

When a potential difference is applied to the crystal, the electrons travel toward the<br />

positive electrode and the holes toward the negative electrode, thus generation a current.<br />

It is important that current not flow when there is no applied potential. And it is also<br />

important that all the charge carriers be detected when there is an applied potential.<br />

Semiconductor detectors are similar to ionization chambers <strong>in</strong> that the energy deposited<br />

by the <strong>in</strong>com<strong>in</strong>g ioniz<strong>in</strong>g radiation is exactly equivalent to the number of electron‐hole<br />

pairs produced and it is thus important that all the charge be collected. As with an<br />

ionization chamber detector, semiconductor detectors suffer from the problem of<br />

re‐comb<strong>in</strong>ation of the produced charge. The ability of these detectors to furnish accurate<br />

energy data is degraded by the trapp<strong>in</strong>g of electrons which creates with<strong>in</strong> the crystal<br />

structure a space charge that reduces the electric potential between the electrodes, further<br />

facilitat<strong>in</strong>g re‐comb<strong>in</strong>ation of electron hole pairs.<br />

Pr<strong>in</strong>ciple of Operation<br />

An electron‐hole pair is produced when <strong>in</strong>com<strong>in</strong>g ioniz<strong>in</strong>g radiation deposits energy<br />

which allows an electron to move to an excited or higher energy state. In certa<strong>in</strong> crystal<br />

materials, the electrons get trapped <strong>in</strong> an energy state, known as the conduction band, and<br />

cannot decay back to a lower energy state. Semiconductor materials have the property<br />

that, under the <strong>in</strong>fluence of an electric potential difference, the electrons <strong>in</strong> the conduction<br />

band can move and at the same time the crystal structure can propagate, between<br />

neighbor<strong>in</strong>g lattice po<strong>in</strong>ts, a net positive charge because of the miss<strong>in</strong>g electron. This

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