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Configuration Handbook - Kamami.pl

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Serial <strong>Configuration</strong> Devices (EPCS1, EPCS4, EPCS16, & EPCS64) FeaturesFigure 4–9. Read Status Operation Timing DiagramnCS0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15DCLKOperation CodeASDIDATAHigh ImpedanceStatus Register OutStatus Register Out7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7MSBMSBWrite Status OperationThe write status operation code is b'0000 0001, with the MSB listedfirst. Use the write status operation to set the status register blockprotection bits. The write status operation has no effect on the other bits.Therefore, designers can im<strong>pl</strong>ement this operation to protect certainmemory sectors, as defined in Tables 4–15 and 4–14. After setting theblock protect bits, the protected memory sectors are treated as read-onlymemory. Designers must execute the write enable operation before thewrite status operation so the device sets the status register’s write enablelatch bit to 1.The write status operation is im<strong>pl</strong>emented by driving nCS low, followedby shifting in the write status operation code and one data byte for thestatus register on the ASDI pin. Figure 4–10 shows the timing diagram forthe write status operation. nCS must be driven high after the eighth bit ofthe data byte has been latched in, otherwise, the write status operation isnot executed.Immediately after nCS is driven high, the device initiates the self-timedwrite status cycle. The self-timed write status cycle usually takes 5 ms forall serial configuration devices and is guaranteed to be less than 15 ms(see t WS in Table 4–19). Designers must account for this delay to ensurethat the status register is written with desired block protect bits.Alternatively, you can check the write in progress bit in the status registerby executing the read status operation while the self-timed write statuscycle is in progress. The write in progress bit is 1 during the self-timedwrite status cycle, and is 0 when it is com<strong>pl</strong>ete.Altera Corporation 4–25April 2007 <strong>Configuration</strong> <strong>Handbook</strong>, Volume 2

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