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Configuration Handbook - Kamami.pl

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<strong>Configuration</strong> Devices for SRAM-Based LUT Devices Data SheetTable 5–14. DC Operating ConditionsSymbol Parameter Conditions Min Max UnitV IH High-level input voltage 2.0 V CC + 0.3 V(5)V IL Low-level input voltage –0.3 0.8 VV OH5.0-V mode high-level TTL outputvoltage3.3-V mode high-level CMOSoutput voltageI OH = –4 mA DC (6) 2.4 VI OH = –0.1 mA DC (6) V CC – 0.2 VV OL Low-level output voltage I OL = 4 mA DC (6) 0.4 VI I Input leakage current V I = V CC or ground –10 10 μAI OZ Tri-state output off-state current V O = V CC or ground –10 10 μATable 5–15. EPC1213, EPC1064 & EPC1064V Device I CC Sup<strong>pl</strong>y Current ValuesSymbol Parameter Conditions Min Typ Max UnitI CC0 V CC sup<strong>pl</strong>y current (standby) 100 200 μAI CC1V CC sup<strong>pl</strong>y current(during configuration)10 50 mATable 5–16. EPC2 Device ValuesSymbol Parameter Conditions Min Typ Max UnitI CC0 V CC sup<strong>pl</strong>y current (standby) V CC = 5.0 V or 3.3 V 50 100 µAI CC1 V CC sup<strong>pl</strong>y current (duringconfiguration)V CC = 5.0 V or 3.3 V 18 50 µAR CONF <strong>Configuration</strong> pins Internal pull up (OE, nCS,nINIT_CONF)1 kΩTable 5–17. EPC1 Device I CC Sup<strong>pl</strong>y Current ValuesSymbol Parameter Conditions Min Typ Max UnitI CC0 V CC sup<strong>pl</strong>y current (standby) 50 100 µAI CC1V CC sup<strong>pl</strong>y current (duringconfiguration)V CC = 5.0 V 30 50 mAV CC = 3.3 V 10 16.5 mAAltera Corporation 5–25April 2007 <strong>Configuration</strong> <strong>Handbook</strong>, Volume 2

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