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U. Glaeser

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1st EmDRAM Product<br />

FIGURE 41.19 Embedded DRAM history.<br />

FIGURE 41.20 Performance of embedded DRAM.<br />

In the 0.18 µm EmDRAM process, the optical proximity correction (OPC ) technology and the phaseshift<br />

mask technology (PSM) were very important. See Figs. 41.24 and 41.25. Many high-performance<br />

manufacturing and measurement automatic machines, such as those shown in Fig. 41.26, are necessary.<br />

Figure 41.27 shows the cross-sectional view of 0.18 µm EmDRAM, which was realized by utilizing all<br />

these technologies and high-performance machines.<br />

Now some comments on key factors: technology extention such as optical extention and full flat process<br />

technology. KrF lithograpy optical extention features high NA, ultra-resolution, thin photo resist, and<br />

the OPC technology. Wirings are fully planarized interlayers of Cu/Dual Damascene. The EmDRAM<br />

features a fully planarized capacitor with the global step-less DRAM/logic structure by self-align process.<br />

© 2002 by CRC Press LLC<br />

0.50 µ m<br />

1995 MP Start<br />

8 mm Camcoder LSI<br />

512 kbit DRAM + 50 kG<br />

10<br />

NM EMDRAM<br />

1<br />

0.5 GB/s<br />

s<br />

DRAM<br />

0.1<br />

Many Applications/Products<br />

Peek Bandwidth(GByte/s)<br />

100<br />

Sony<br />

Em-DRAM<br />

0.35 µ m<br />

1996 MP Start<br />

MD LSI<br />

2 Mbit DRAM + 200 kG<br />

2.0 V Low Voltage Operation<br />

High-Bandwidth DRAM Performance<br />

33 GB/s<br />

2.0 GB/s<br />

76.8 GB/s<br />

Higher Performance System<br />

MO EmDRAM<br />

ISSCC 98 Champion<br />

M EmDRAM<br />

10.6 GB/s<br />

1.6 GB/s<br />

(Direct)<br />

0.6 GB/s<br />

Rambus DRAM<br />

(Concurrent-60)<br />

96.1Q 97.1Q 98.1Q 99.1Q 00.1Q<br />

MP Start (C. Year)<br />

0.25 µ m<br />

1999 MP Start<br />

Graphics Synthesizer (PS2)<br />

32 Mbit DRAM + 1500 KG<br />

DRAM Bandwidth 48 GB/s

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