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U. Glaeser

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FIGURE 41.23 Em-DRAM process technology.<br />

FIGURE 41.24 Optical proximity correction.<br />

FIGURE 41.25 Phase-shift mask (PSM) technology.<br />

© 2002 by CRC Press LLC<br />

0.25 µm Process<br />

0.25 µm<br />

DRAM Tr. Gate<br />

BMD<br />

(Buried Metal on Diffusion layer)<br />

0.18 µm Process<br />

1MT<br />

W.CMP<br />

Capacitor HSG<br />

Bit Line<br />

DRAM Cell 1.32 * 0.60 µm 2 DRAM Cell 0.88 * 0.42 µm 2<br />

W-Policide Single Gate (L = 0.25 µ m) W-Policide DUAL Gate (L = 0.15 µ m)<br />

BMD(Buried Metal on Diffusion layer) High Aspect Ratio 1st Metal Contact<br />

0.16 µ<br />

m<br />

Photo resist pattern<br />

0.16 µ m<br />

Logic Area DRAM Area<br />

SAC<br />

STI<br />

0.18 µm<br />

DRAM Tr. Gate<br />

Logic Tr.<br />

Gate Oxinitride<br />

Co Salicide<br />

0.15 µm µ Dual_Gate<br />

0.15 µm<br />

Logic Tr. Gate

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