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U. Glaeser

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FIGURE 41.21 CMOS memory cell size.<br />

FIGURE 41.22 Embedded DRAM history.<br />

41.4 Conclusion<br />

Some introductory comments on the basic semiconductor device concepts were given. They are strongly<br />

related to the microelectronics of the present home entertainment LSI chips. The chapter covered in<br />

detail some product specifications and performance aspects of the home entertainment LSI chip sets,<br />

such as those used in digital cameras, home robotics, and games. Cost of EmDRAM and its solutions by<br />

using EmDRAM are strongly related with new market creation such as PSX2. The EmDRAM technology<br />

for PS2/computer and some other future home entertainment electronics gadgets has a potential to be<br />

the technology driver in the years to come.<br />

© 2002 by CRC Press LLC<br />

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Design Rule 0.7 µm 0.35 µm 0.25 µm 0.18 µm<br />

DRAM<br />

Cell Size<br />

Key Process<br />

Technology<br />

Logic<br />

Cross<br />

Section<br />

DRAM<br />

Cross<br />

Section<br />

Mass<br />

Production<br />

2.10 µm x 4.28 µm<br />

= 8.99 (µm 2 )<br />

2 Metal(Al) Layer<br />

BPSG Reflow<br />

Spin On Glass<br />

Stacked Capacitor<br />

1992 ~<br />

1.28 µm x 2.74 µm<br />

= 3.51 (µm)<br />

3 Metal(Al-Cu) Layer<br />

SiO 2 Dummy<br />

Blanket W(Tungsten)<br />

Stacked Capacitor<br />

1994 ~<br />

0.60 µm x 1.32 µm<br />

= 0.79 (µm 2 )<br />

5 Metal(Al-Cu) Layer<br />

Buried Metal Diffusion<br />

CMP<br />

Poly Shrunken Contact<br />

Cylindrical Capacitor<br />

1998 ~<br />

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0.44 µm x 0.84 µm<br />

= 0.37 (µm 2 )<br />

6 Metal(Al-Cu) Layer<br />

Self Aligned Contact<br />

Hemispherical<br />

- Grained Silicon<br />

Self aligned Co Silicide<br />

Shallow Trench Isolation<br />

2000 ~

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