RL78/D1A User's Manual: Hardware - Renesas

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Under development Preliminary document Specifications in this document are tentative and subject to change. RL78/D1A CHAPTER 28 FLASH MEMORY Table 28-9. Relationship Between Enabling Security Function and Command (1) During on-board/off-board programming Valid Security Executed Command Block Erase Write Prohibition of block erase Blocks cannot be erased. Can be performed. Note Prohibition of writing Blocks can be erased. Cannot be performed. Prohibition of rewriting boot cluster 0 Boot cluster 0 cannot be erased. Boot cluster 0 cannot be written. Note Confirm that no data has been written to the write area. Because data cannot be erased after block erase is prohibited, do not write data if the data has not been erased. (2) During self programming Valid Security Prohibition of block erase Prohibition of writing Executed Command Block Erase Write Blocks can be erased. Can be performed. Prohibition of rewriting boot cluster 0 Boot cluster 0 cannot be erased. Boot cluster 0 cannot be written. Remark To prohibit writing and erasing during self-programming, use the flash sealed window function (see 28.7.2 for detail). (1) On-board/off-board programming Table 28-10. Setting Security in Each Programming Mode Security Security Setting How to Disable Security Setting Prohibition of block erase Set via GUI of dedicated flash memory Cannot be disabled after set. Prohibition of writing programmer, etc. Execute security release command Prohibition of rewriting boot cluster 0 Cannot be disabled after set. Caution The security release command can be applied only when the security is not set as the block erase prohibition and the boot cluster 0 rewrite prohibition with code flash memory area and data flash memory area being blanks. (2) Self programming Security Security Setting How to Disable Security Setting Prohibition of block erase Set by using flash self programming Cannot be disabled after set. Prohibition of writing library. Execute security release command during on-board/off-board programming (cannot be disabled during self programming) Prohibition of rewriting boot cluster 0 Cannot be disabled after set. R01UH0317EJ0004 Rev. 0.04 1177 Feb. 22, 2013
Under development Preliminary document Specifications in this document are tentative and subject to change. RL78/D1A CHAPTER 28 FLASH MEMORY 28.7 Flash Memory Programming by Self-Programming The RL78/D1A supports a self-programming function that can be used to rewrite the flash memory via a user program. Because this function allows a user application to rewrite the flash memory by using the RL78/D1A self-programming library, it can be used to upgrade the program in the field. Cautions 1. The self-programming function cannot be used when the CPU operates with the subsystem clock. 2. To prohibit an interrupt during self-programming, in the same way as in the normal operation mode, execute the self-programming library in the state where the IE flag is cleared (0) by the DI instruction. To enable an interrupt, clear (0) the interrupt mask flag to accept in the state where the IE flag is set (1) by the EI instruction, and then execute the self-programming library. 3. When enabling RAM parity error resets (RPERDIS = 0), be sure to initialize the RAM area to overwrite + 10 bytes before overwriting. Remarks 1. For details of the self-programming function and the RL78/D1A self-programming library, refer to RL78 Microcontroller Self Programming Library Type01 User’s Manual (R01AN0350E). 2. For details of the time required to execute self programming, see the notes on use that accompany the flash self programming library tool. Similar to when writing data by using the flash memory programmer, there is one flash memory programming modes for which the voltage range in which to write, erase, or verify data differs. Table 28-11. Programming Modes and Voltages at Which Data Can Be Written, Erased, or Verified Mode Voltages at which data can be written, erased, or verified Writing Clock Frequency Full speed mode Note 2.7 V to 5.5 V 32 MHz (MAX.) Note This can only be specified if the CMODE1 and CMODE0 bits of the option byte 000C2H are 1. Specify the mode that corresponds to the voltage range in which to write data. If the argument fsl_flash_voltage_u08 is 00H when the FSL_Init function of the self programming library provided by Renesas Electronics is executed, full-speed mode is specified. Remarks 1. Using the full speed mode imposes no restrictions on writing, deletion, or verification. 2. For details of the self-programming function and the RL78/D1A self-programming library, refer to RL78 Microcontroller Self Programming Library Type01 User’s Manual (R01AN0350E). R01UH0317EJ0004 Rev. 0.04 1178 Feb. 22, 2013
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User’s Manual 16 RL78/D1A 16-Bit
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NOTES FOR CMOS DEVICES (1) VOLTAGE
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Conventions Data significance: High
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CONTENTS CHAPTER 1 OUTLINE.........
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