Abstracts Book - IMRC 2018

• SB4-P003
MORPHOLOGICAL EFFECTS OF ALUMINUM DOPING ON ZINC
SULFIDE THIN FILMS SUPPORTED ON SILICON DIOXIDE
Osvaldo Nava 1 , Carlos Alberto Soto Robles 1 , Maria Cosio 1 , Ruben Villarreal 1 , Claudia Gomez 2 ,
Amanda Carrillo Castillo 3 , Amelia Olivas 4 , Priscy Alfredo Luque 1
1
Universidad Autónoma de Baja California, Bioingeniería, Mexico. 2 Universidad Autónoma de
Baja California, Kilometro 104 Tijuana Ensenada, Mexico. 3 Universidad Autónoma de Ciudad
Juárez, IIE, Mexico. 4 Universidad Nacional Autónoma de México, CNyN, Mexico.
This work presents the effect of doping thin films of zinc sulfide (ZnS), supported
on silicon dioxide (SiO2), with aluminum (Al) via chemical bath deposition. The
concentration of aluminum varied between 0 and 0.4 M. The resulting materials
were characterized by different techniques: The study of the crystalline
structure of the thin films was carried out by means of X-ray diffraction; the
interaction of the chemical bonds was studied via FTIR spectrometer; the
analysis of the surface of the different materials was analyzed with a scanning
electron microscope; the analysis of the optical properties was determined via
Uv-Vis. The ZnS thin films showed a variation in the crystalline structure
depending on the amount of aluminum present in the different materials. The
analysis of the different links clearly showed the signal for Zn-S interaction. The
morphology analysis of the thin films showed a clear difference in the surface
between the samples; those doped with of 0.4 M of Al presented a
homogeneous, pit-free morphology. On the other hand, samples doped with
low amounts of Al had a tendency to deposit heterogeneous thin films with
clusters in the materials. The band gap values showed variations around 3.7 eV,
depending on the value of the amount of Al.
Acknowledgment:
Facultad de Ingenieria, Arquitectura y Diseño - UABC
Keywords: Chemical Bath Deposition, Aluminum doping, ZnS thin film
Presenting authors email: ossnaol@gmail.com