Abstracts Book - IMRC 2018

• SE3-P015
EFFECT OF Dy DOPING ON THE THERMOLUMINESCENCE
PROPERTIES OF ZnO PHOSPHORS
Raul Aviles Monreal 1 , Catalina Cruz Vázquez 2 , Rodolfo Bernal Hernández 1
1 Universidad de Sonora, Departamento de Investigación en Física, Mexico. 2 Universidad de
Sonora, Departamento de Investigación en Polímeros y Materiales, Mexico.
The optoelectronic properties of ZnO have been the subject of a number of
investigations. It can be easily utilized as photocatalytic, optoelectronic,
piezoelectric, and luminescence devices and gas sensing. It is a non-toxic wide
band gap (3.2 eV) semiconductor with a 60 meV exciton binding energy that can
be obtained through low cost and easy synthesis routes 1 . It is possible tuning
the optical properties of ZnO by doping with different impurities. In this work,
we report on the effect of Dy doping on the thermoluminescence (TL)
characteristics of ZnO sintered at 1000 °C for 48 h. X-ray diffraction patterns
revealed a hexagonal wurtzite phase. The TL glow curves recorded using a 5 °C
heating rate exhibit one principal peak with maximum at ~300 °C, and an smaller
peak around 55 °C. The integrated TL increases by increasing the beta particle
irradiation dose, with no saturation clouds and a linear behavior 1.0 Gy to 2,048
Gy. A 10 % TL fading was observed 96 h after 20 Gy irradiation, and the
reusability in 10 irradiation and TL readout cycles presents no significant
changes (σ = 0.0143). The computed lower detectable dose was 3.6 mGy. Based
in the properties here reported, we conclude that Dy doped ZnO is a promising
phosphor material for application in different branches of radiation dosimetry.
Özgür Ü.; Alivov Ya. I.; Liu C.; Teke A.; Reshchikov M. A.; DoÄŸan S.; Avrutin
V.; Cho S.; Morkoç H. A Comprehensive Review of ZnO Materials and Devices.
J. Appl. Phys. 2005, 98, 12-15.
Keywords: ZnO, thermoluminescence, Dosimetry
Presenting authors email: raulaviles@gimmunison.com