Abstracts Book - IMRC 2018

• SF2-P006
FREQUENCY – ELECTRICAL IMPEDANCE DEPENDENCIES OF
NEUTRON-IRRADIATED NANOCRYSTALLINE SILICON CARBIDE
(3C-SiC)
Elchin Huseynov 1
1 Institute of Radiation Problems of Azerbaijan National Academy of Sciences, AZ1143,
Azerbaijan.
At the present work, nanocrystalline silicon carbide has 120 m 2 /g special surface
area (SSA), 18 nm size particles and 0.03g/cm 3 (true density 3.216 g/cm 3 ) density.
Samples used during experiments have been irradiated by neutrons
(2x10 13 n·cm -2 s -1 ) in central channel (channel A1) of TRIGA Mark II reactor at full
power (250 kW thermal powers). Impedance spectra of nanocrystalline 3C-SiC
particles have been comparatively analyzed before and after neutron
irradiation. Neutron transmutation ( 31 P isotopes production) effects on the
impedance spectra and relaxation times have been studied. Neutron
transmutation, dangling bonds, defects or additional charge carriers,
agglomeration and amorphous transformation effects on the physical
properties of neutron-irradiated nanocrystalline silicon carbide (3C-SiC) have
been studied at the various papers [1-5].
Resonance states have been observed in impedance spectra of nanocrystalline
3C-SiC particles at the various temperatures. Simultaneously, resonance states
in the impedance spectra shifted to the direction of frequency increase after
neutron irradiation (approx. 10 times). Numeral value of impedance of
nanocrystalline 3C-SiC particles decreases approximately 5,5 times as a result of
neutron irradiation. Relaxation period of nanocrystalline 3C-SiC particles
decreased appropriate to increase of neutron irradiation periods at the all
temperature ranges. Probably, new 31 P isotopes lead to a decrease of relaxation
period proportionally to neutron irradiation. Moreover, amorphous
transformation or agglomeration of nanocrystalline 3C-SiC particles are another
factor to influence on polarization degree and relaxation period of sample.
1. Elchin M. Huseynov Electrical impedance spectroscopy of neutronirradiated
nanocrystalline silicon carbide (3C-SiC) Applied Physics A,
124:19, 2018