Abstracts Book - IMRC 2018

• SF2-O018
FABRICATION AND CHARACTERIZATIONS OF A CuInSe2 THIN
FILM BY A THREE-STAGE HYBRID METHOD
Ashok Adhikari 1 , Jorge Sergio Narro Rios 1 , Ganesh Regmi 1 , Velumani Subramaniam 1
1 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, Sección de Electrónica
del Estado Sólido (SEES), Mexico.
Copper indium diselenide (CISe) chalcopyrite has a tetragonal crystal structure,
direct band gap (1.04 eV), high absorption coefficient (≈10 5 cm -1 ) and high
stability, because of these properties it comports as a reliable absorber layer. In
this work, CISe thin film was prepared by a three-stage hybrid (3SH) method that
includes uniting vacuum and non-vacuum techniques. Vacuum methods are
relatively high-efficiency processes as compared to non-vacuum processes., but
a the same time, non-vacuum processes are economical, easy scale-up, high
material utilization than vacuum methods. In this 3SH method, the first stage
uses non-vacuum chemical spray pyrolysis (CSP), 2 nd and 3 rd stages use vacuum
co-evaporation. The first stage beggings with the deposition of γ-In 2 Se 3 over
soda lime glass (SLG) substrates, of N,N-dimethyl selenourea (0.0045 M) and
InCl 3 (0.0015M) as precursors of Se and In respectively by CSP, were carried out
with a temperature range 300°C- 340°C. In the second stage, a subsequent coevaporation
of Cu-Se is performed onto the prepared precursor of In 2 Se 3 film
and followed by the third stage, which evaporates In-Se atoms under the lowpressure
condition and a substrate temperature of 500°C. The structure and
morphology of CISe thin films were studied by X-ray diffraction (XRD), Scanning
Electron Microscopy (SEM), Raman spectroscopy, and Energy Dispersive X-ray
spectroscopy (EDS) techniques. XRD results show the presence of strong CISe
phase at 2 value of 26° with (112) plane and other CISe phase at 52°and 63°
having planes (211) and (008) respectively. All samples have a Cu 2 Se phase at 2
value of 43° with (220) plane and there is also CuSe phase occurred on the
sample where the first stage deposited at a temperature of 340°C. The SEM
analysis shows that all three samples have almost equal grain size on the range
of 0.5-1 EDS results shows that concentration of Cu is slightly less than In
concentration and more than 45% of the concentration of Se was found which
is agreement with a high-efficiency solar cell. The optical characterization
(Transmittance and Reflectance) by UV-Vis spectrophotometry and electrical
characterization (Sheet resistance, Hall Effect studies) by Van der Pauw method
were carried out.