Abstracts Book - IMRC 2018

• SF2-P056
AlGaN-BASED METAL-SEMICONDUCTOR ROUND CONTACTS.
EFFECT OF SERIES ELECTRICAL RESISTANCE (RS) ON THE
ADMITTANCE MEASUREMENTS AT OPERATION HIGH-
FREQUENCY
Heberto Gómez 1 , Maria de la Luz Olvera Amador 2 , Venkata Krishna Karthik Tangirala 3
1 Universidad Autónoma del Estado de Hidalgo, Área Academica de Computacion y Electronica,
Mexico. 2 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, SEES, Mexico.
3 Universidad Autónoma del Estado de Hidalgo, Nanotecnologia, Mexico.
We investigated the effect of the round contacts of metal-semiconductor based
on AlGaN on the admittance measurements at operation high frequency, has to
be conducted in order to know correct capacitance–voltage measurements. The
admittance measurements were performed for frequencies ranging from 1 Hz
to 1 GHz and bias voltages from 0 to 1 V and were usually at different operation
temperatures and from mathematical models, we showed that the frequencydependent
capacitance and conductance data did not reveal some information
about trapping but the electrical properties of the semiconductor film and series
electrical resistance of metal-semiconductor contact. In this work the analyses
are tried in terms of a transfer length concept, L T (jw), that determines the
appropriate measuring frequencies to be used in such measurements.
Acknowledgment:
Departamento de Ingeniería Electrónica, ETSI, Telecomunicación, Universidad
Politécnica de Madrid, 28040 Madrid, España.
Keywords: AlGaN, metal semiconductor, serial resistance
Presenting authors email: molvera@cinvestav.mx