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Abstracts Book - IMRC 2018

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• SA6-O034<br />

NANOSCALE INVESTIGATION OF ENHANCED FIELD ELECTRON<br />

EMISSION FOR GOLD-DIAMOND NANOHYBRIDS<br />

Sankaran Kamatchi Jothiramalingam 1,2 , Kalpataru Panda 3 , Balakrishnan Sundaravel 4 , I-Nan Lin 5 ,<br />

Ken Haenen 1,2<br />

1<br />

Hasselt University, Institute for Materials Research, Belgium. 2 IMEC vzw, IMOMEC, Belgium.<br />

3 KAIST, Center for Nanomaterials and Chemical Reactions, Korea. 4 Indira Gandhi Centre for<br />

Atomic Research, Materials Physics Division, India. 5 Tamkang University, Department of<br />

Physics, Taiwan.<br />

Field emitters with superior field electron emission (FEE) characteristics are<br />

employed as cold cathode materials in flat panel displays and other electron<br />

emitting devices. Diamond possesses high FEE characteristics due to its negative<br />

electron affinity, which makes it a promising material for applications as FEE<br />

emitters. Recently, the main focus has been directed towards the synthesis of<br />

the ultrananocrystalline diamond (UNCD) film, containing the ultra-small<br />

diamond grains of 5–10 nm with smooth surface characteristics, which exhibits<br />

higher electrical conductivity and better FEE properties than the other form of<br />

diamond films. The sp 2 -bonded carbon in the grain boundaries of UNCD films is<br />

conceived as the electron conduction channel in FEE. Moreover, the direct<br />

detection of electron emission site the diamond grain or grain boundaries in<br />

such a microscopic scale is crucial. Scanning tunneling microscopy (STM) is being<br />

utilized to investigate the local FEE behavior and surface electronic properties of<br />

diamond films.<br />

In this work, a detailed STM investigation is carried out to locally image and<br />

understand the mechanism behind enhanced conductivity and FEE properties<br />

for Au-ion implanted UNCD films. The UNCD films, which were Au-ion implanted<br />

with 1 x 10 17 ions/cm 2 , possess high electrical conductivity of 5076.0 S/cm and<br />

low turn-on field of 1.6 V/μm with a high FEE current density of 5.4 mA/cm 2 (@<br />

2.65 V/μm). Straight imaging of conducting/non-conducting sites is mapped by<br />

STM. The local current-voltage measurements illustrate that grain boundaries<br />

are the conducting/emitting sites. Further, this fact is supported by the high<br />

resolution current imaging tunneling spectroscopy. The formation of abundant<br />

conducting sp 2 nanographitic phases along the diamond grain boundaries,<br />

confirmed transmission electron microscopic examinations, is believed to be the<br />

genuine factor that helps for the easy transport of electrons and hence<br />

enhances the conductivity/emission properties. The fabrication of these films

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