Abstracts Book - IMRC 2018

• SA2-O008
SYNTHESIS OF SiGe ALLOYS BY THE SIMULTANEOUS LASER
ABLATION OF Si AND Ge TARGETS
Angel Estrada López 1 , Mariana Giselle Hernandez Jimenez 2 , Laura Patricia Rivera Resendiz 3,4 ,
Enrique Camps 3 , M. A. Santana Aranda 5 , A. Pérez Centeno 5 , Gilberto Gomez Rosas 5 , A. Chávez
Chávez 5 , Guadalupe Cárdenas 5 , J. G. Quiñones Galván 5
1 Universidad de Guadalajara, Ingenieria de Proyectos, Mexico. 2 Universidad Juárez Autónoma
de Tabasco, Ingenieria en Nanotecnologia, Mexico. 3 Instituto Nacional de Investigaciones
Nucleares (ININ), Fisica, Mexico. 4 Universidad Nacional Autónoma de México, Instituto de
Investigaciones en Materiales, Mexico. 5 Universidad de Guadalajara, Fisica, Mexico.
Ge rich SiGe alloys have been deposited by the simultaneous laser ablation
technique. The individual plasmas were diagnosed by means of TOF technique
based on Langmuir planar probe measurements. Mean kinetic energy and
density of the ions were estimated. In order to grow SiGe alloys, Si and Ge
plasmas were combined, the plasma parameters of Si were fixed while varying
the parameters for the Ge plasma to get different compositions. Films were
grown at room temperature on glass and Si substrates. The as grown samples
were thermally annealed from 400 to 700°C and Raman spectroscopy
measurements were carried out in situ while heating in order to observe
structural changes with temperature. The as grown and annealed films (700°C)
were structurally characterized by X-ray diffraction. Results show a dependence
on la plasma parameters on the structural properties of the films.
Acknowledgment:
Author acknowledge technical support of Sergio Oliva.
Keywords: SiGe, PLD, Plasmas
Presenting authors email: jose.quinones@academicos.udg.mx