Abstracts Book - IMRC 2018

• SA4-P009
WHITE LUMINESCENCE ACTIVATED BY NITROGEN
INCORPORATION IN SI/SIOX MULTILAYERS.
Braulio Palacios Márquez 1 , Karla Esther González Flores 1 , Mario Moreno 2 , Liliana Licea 1 , Sergio
Alfonso Pérez 1 , Alfredo Morales 1
1
Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Mexico. 2 Instituto
Nacional de Astrofísica, Óptica y Electrónica, Electrónica, Mexico.
This work shows the effect of the nitrogen incorporation in Si/SiOx multilayers
(Si/N:SiOx MLs) for the development of Si-based light sources. Si/N:SiOx MLs
were deposited by RF magnetron sputtering changing, both, the Si and N:SiOx
thickness. Si/SiOx MLs without N were also deposited for comparison. All MLs
were thermally annealed at 1100°C for 2h to induce the Si nanocrystals (Si-ncs)
formation. Si/SiOx MLs without N exhibit a broad red photoluminescent (PL)
band (600 to 850 nm) due to the presence of Si-ncs embedded in the ML.
Nevertheless, a broad blue-green PL band (400 to 600 nm) appears when the N
is incorporated in the Si/SiOx ML. The intensity of this blue-green band becomes
stronger when the N content increases 2 to 4 at.% widening the PL spectrum
400 to 850 nm. This effect is related to the presence of Si-ncs and defects
produced by the N incorporation, as measured by XPS, within the SiOx matrix.
Therefore, the Si/N:SiOx MLs can be an alternative for the development of white
light sources.
Acknowledgment:
B. Palacios and K. González acknowledge the M.Sc. and Ph.D. grant received
CONACyT, respectively. A. Morales-Sánchez is grateful for the support received
CONACYT of México in form of the Basic Science grant #180992. The help of Luis
Gerardo Silva (CIMAV Campus Monterrey) is also appreciated for XPS
measurements.
Keywords: Silicon nanocrystals, Photoluminescence, Multilayers
Presenting authors email: alfredo.morales@cimav.edu.mx