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Abstracts Book - IMRC 2018

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• SA5-O005<br />

TAILORING THE MICROSTRUCTURE TOWARDS CONDUCTIVE<br />

NANOCRYSTALLINE DIAMOND FILMS FOR ENHANCED FIELD<br />

ELECTRON EMISSION CHARACTERISTICS<br />

Sankaran Kamatchi Jothiramalingam 1,2 , Chien-Jui Yeh 3 , Ping-Yen Hsieh 4 , Paulius Pobedinskas 1,2 ,<br />

Key-Chyang Leou 3 , Marlies K. Van Bael 1,2 , Nyan-Hwa Tai 4 , I-Nan Lin 5 , Ken Haenen 1,2<br />

1<br />

Hasselt University, Institute for Materials Research, Belgium. 2 IMEC vzw, IMOMEC, Belgium.<br />

3 National Tsing Hua University, Department of Engineering and System Science, Taiwan.<br />

4 National Tsing Hua University, Department of Materials Science and Engineering, Taiwan.<br />

5<br />

Tamkang University, Department of Physics, Taiwan.<br />

Field electron emitters (FEE) with applicable electron emission characteristics,<br />

such as low turn-on field, large field enhancement factor and stable and high<br />

FEE current density, find potential applications as cold cathodes in X-rays, flat<br />

panel displays and microplasma devices. Among carbon based FEE emitters,<br />

nanocrystalline diamond (NCD) has appealed substantial consideration in<br />

vacuum microelectronics owing to its low electron affinity for electron emission,<br />

strong bonding structure, good thermal and electrical conductivities to hold high<br />

currents, and utmost hardness to withstand ion bombardment.<br />

This work deals with the influence of varying the concentration of CH4 in the<br />

CH4/H2/N2 gas mixtures on plasma reactivity and on NCD’s microstructural<br />

evolution. While the NCD films grown in CH4/H2/N2 (1/96/3) plasma contain large<br />

diamond grains, the microstructure changed considerably for the NCD films<br />

grown using CH4/H2/N2 (5/92/3) (or CH4/H2/N2 (10/87/3)), ensuing in nano-sized<br />

diamond grains. For CH4/H2/N2 (15/82/3) grown NCD films, well-defined needlelike<br />

nanostructures evolve. These needle-like structured NCD films contain sp 3<br />

phase diamond, sheathed with sp 2 bonded graphitic phases, achieving low<br />

resistivity of 90 ohm-cm and superior FEE properties, namely, low turn-on field<br />

of 4.3 V/μm, high FEE current density of 3.3 mA/cm 2 at an applied field of 8.6<br />

V/μm and large field enhancement factor of 3865. The optical emission<br />

spectroscopy studies authorize that the presence of CN and C2 species in the<br />

growing plasma are the main factors for the changes in the microstructure of<br />

the films. However, the increase in substrate temperature to a high enough<br />

value (~780°C) due to the incorporation of 15% CH4 in CH4/H2/N2 plasma is the<br />

key factor resulting in the formation of needle-like diamond grains. Especially,<br />

the NCD films with needle-like geometry are the most auspicious ones for the<br />

FEE, especially when they are encased in graphitic phases. The outstanding

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