Abstracts Book - IMRC 2018

• SC4-O022
PROCESSING AND CHARACTERIZATION OF SB2TE3 BY DC-
SPUTTERING DEPOSITION FOR SOLAR CELLS APLICATION
Rogelio Mendoza Pérez 1 , Jose Alfredo del Oso Acevedo 1 , Jorge Sastré Hernández 2 , José Joaquín
Lizardi del Ángel 1 , Guillermo Santana 3 , Gerardo Contreras Puente 2
1
Universidad Autónoma de la Ciudad de México, Colegio de Ciencia y Tecnología, Mexico.
2 Escuela Superior de Física y Matemáticas IPN, Física, Mexico. 3 Instituto de Investigaciones en
Materiales, Instituto de Investigaciones en Materiales,, Mexico.
This work presents results about the deposition and characterization of
antimony telluride (Sb2Te3) thin film grown by DC- sputtering. Sb2Te3 was
deposited varying magnetron power from 10 W to 60 W, the substrate
temperature from room temperature to 300 °C, and the deposition pressure
from 5 to 20 mTorr. Sb2Te3 is used as p+ material on CdTe solar cells because it
improves their efficiency and stability by obtaining a Te-rich region. Energy
dispersive spectrometry (EDS), morphology, resistivity, and profile
measurements were carried out on Sb2Te3 samples. The EDS analyses revealed
that if the pressure decreases to 5 mTorr, the mass quantity and atomic
composition of Te obtained in the thin film composition increases. On the other
hand, when temperature is increased to 300 °C the quantity of Te increases near
3.77 keV and a "sheath"-type structure appeared, with elongated grains of
Sb2Te3. Finally, we found that when the substrate temperature increased the
resistivity decreased slightly to 4.8 × 10 -3 ohm-cm. So for CdTe solar cells
application it is necessary to obtain a Te content in the range 60-70% (atomic);
for this, it is convenient to grow Sb2Te3 by DC-sputtering at low pressure and
relative high temperature, near 300 °C.
Acknowledgment:
The authors wish to express acknowledgment of financial support by CONACyT
under project FOMIX 189282
Keywords: p+ material, back contact, antimony telluride
Presenting authors email: rogeliomp02@gmail.com